Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Rodrick Kuate Defo"'
Publikováno v:
Nature Reviews Physics. 4:543-559
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76191e5df241707fc034557d66447503
http://arxiv.org/abs/2212.07402
http://arxiv.org/abs/2212.07402
The electromagnetic local density of states (LDOS) is crucial to many aspects of photonics engineering, from enhancing emission of photon sources to radiative heat transfer and photovoltaics. We present a framework for evaluating upper bounds on LDOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92751fd27c3e081580d2c3c8cb3c2ab0
Publikováno v:
Physical Review B. 104
The hyperfine interaction is an important probe for understanding the structure and symmetry of defects in a semiconductor. Density functional theory has shown that it can provide useful first-principles predictions for both the hyperfine tensor and
Publikováno v:
Proc Natl Acad Sci U S A
The negatively charged silicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can au
Publikováno v:
Journal of Applied Physics. 130:155102
The nitrogen-vacancy (N V) lattice defect in diamond, consisting of an N substitutional atom and an adjacent C vacancy, is commonly observed in two charge states, negative (N V−) and neutral (N V0). The N V− defect exhibits spin state-dependent f
Recently there has been much interest in using Group IV elements from the Periodic Table to fabricate and study X$V$ color centers in diamond where X = Si, Ge, Sn, or Pb and $V$ is a carbon vacancy. These Group IV color centers have a number of inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c2797fe2dc8e6505be3ef59129f2ddb
http://arxiv.org/abs/1905.10832
http://arxiv.org/abs/1905.10832
Autor:
Xingyu Zhang, Rodrick Kuate Defo, Gunn Kim, Efthimios Kaxiras, Evelyn L. Hu, David O. Bracher
Publikováno v:
Physical Review B. 98
Defect engineering in wide-gap semiconductors is important in controlling the performance of single-photon emitter devices. The effective incorporation of defects depends strongly on the ability to control their formation and location, as well as to
Publikováno v:
Journal of Computational Science. 36:101018
We present a novel breadth-first search (BFS) algorithm based on the notion of temporal evolvability that is adaptable to various multicore architectures for simulating diffusion of vacancies in hexagonal silicon carbide (4H-SiC) for information stor
Autor:
Efthimios Kaxiras, Rodrick Kuate Defo, Athanasios Dimoulas, Georgios A. Tritsaris, Sharmila N. Shirodkar, Shiang Fang
Publikováno v:
Physical Review B. 94
The ability to fabricate 2D device architectures with desired properties, based on stacking of weakly (van der Waals) interacting atomically thin layers, is quickly becoming reality. In order to design ever more complex devices of this type, it is cr