Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Rodney J. Soukup"'
Autor:
Petra Kšírová, Josef Krysa, H. Kmentova, N. J. Ianno, Zdeněk Hubička, A. Sarkar, J. Olejníček, D. Sekora, Rodney J. Soukup, Stepan Kment, Zdeněk Remeš
Publikováno v:
Journal of Alloys and Compounds. 607:169-176
The uniform pinhole-free iron disulfide (FeS2) pyrite thin films were fabricated. In the first step the FeO(OH)x xerogel solution was synthetized by means of a novel epoxy catalyzed sol–gel method and next spin-coated onto various substrates to for
Publikováno v:
Thin Solid Films. 520:2395-2408
Investigations of thin film depositions of silicon carbide (SiC) from pulse sputtering a hollow cathode SiC target are presented. The unique feature of the hollow cathode technique is that germanium can be added to the films. This changes the propert
Autor:
Scott A. Darveau, L. E. Flannery, N. J. Ianno, Stepan Kment, C. L. Exstrom, J. Olejníček, Rodney J. Soukup
Publikováno v:
Journal of Alloys and Compounds. 509:10020-10024
CuIn 1− x Al x S 2 thin films ( x = 0, 0.09, 0.27, 0.46, 0.64, 0.82 and 1) with thicknesses of approximately 1 μm were formed by the sulfurization of DC sputtered Cu–In–Al precursors. All samples were sulfurized in a graphite container for 90
Autor:
Scott A. Darveau, Laura E. Slaymaker, A. R. Vandeventer, Natale J. Ianno, C. A. Kamler, Jiri Olejnicek, C. L. Exstrom, Rodney J. Soukup
Publikováno v:
Thin Solid Films. 519:5329-5334
CuIn 1 − x Al x Se 2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu―In―Al precursors and studied via X-ray diffraction, inductively coupled plas
Publikováno v:
Materials Science Forum. :83-86
Thin SiC buffer layers have been grown by sputtering a graphite C target onto both (111) and (110) Si substrates. Converting the graphitic C into SiC is highly temperature dependent and relies on free silicon atoms that sublime from voids in the subs
Autor:
Noel T. Lauer, N. J. Ianno, Stepan Kment, Zdenek Hubicka, Rodney J. Soukup, James Huguenin-Love
Publikováno v:
Materials Science Forum. :131-134
Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.
Autor:
Anatole Mirasano, Martin Diaz, Scott A. Darveau, A. L. Martinez-Skinner, Jiri Olejnicek, Matt A. Ingersoll, Rodney J. Soukup, Natale J. Ianno, C. A. Kamler, Christopher L. Exstrom, James Huguenin-Love
Publikováno v:
Solar Energy Materials and Solar Cells. 94:8-11
A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn 1− x Ga x Se 2 ( x =0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C
Autor:
Scott A. Darveau, Jiri Olejnicek, Natale J. Ianno, C. A. Kamler, James Huguenin-Love, Rodney J. Soukup, Christopher L. Exstrom
Publikováno v:
Solar Energy Materials and Solar Cells. 93:45-50
Previous attempts in producing light absorbing materials with bandgaps near the 1.37 eV efficiency optimum have included the partial substitution of gallium or aluminum for indium in the CIS system. The most efficient of these solar cells to date hav
Autor:
John D. Demaree, Melanie W. Cole, N. J. Ianno, C. Hubbard, Samuel G. Hirsch, Rodney J. Soukup, Noel T. Lauer
Publikováno v:
Integrated Ferroelectrics. 101:63-69
We have developed an rf plasma jet hollow cathode deposition process capable of depositing BaxSr1 - xTiO3 films. The films were deposited in a high vacuum plasma jet system from separate BaTiO3 and SrTiO3 nozzles. Films were deposited onto silicon su
Autor:
Zdenek Hubicka, Tino Hofmann, Natale J. Ianno, Noel Lauer, James Huguenin-Love, Rodney J. Soukup
Publikováno v:
ECS Transactions. 16:201-210
Thin films of SiC were deposited using DC, RF and pulsed sputtering of a hollow cathode. The majority of the films were deposited using RF sputtering at temperatures ranging from 610 to 858 degrees C. Initial films were deposited onto Si substrates i