Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Rodion R. Reznik"'
Autor:
Rodion R. Reznik, Konstantin P. Kotlyar, Igor V. Shtrom, Yuriy B. Samsonenko, Artem I. Khrebtov, George E. Cirlin
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 21, Iss 6, Pp 866-871 (2021)
Recently, III-V semiconductor nanostructures of reduced dimension attract more and more interest of researchers for the new generation devices creation. Combinations of nanostructures with different dimensions are of special interest, among them, for
Externí odkaz:
https://doaj.org/article/ba12c8cd8f094530ac78b6c0c87db51f
Publikováno v:
Nanomaterials, Vol 13, Iss 11, p 1737 (2023)
We present a study with a numerical model based on k→·p→, including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry
Externí odkaz:
https://doaj.org/article/8098fe6a9f0b401db524781e8f225ad3
Autor:
Talgat Shugabaev, Vladislav O. Gridchin, Sergey D. Komarov, Demid A. Kirilenko, Natalia V. Kryzhanovskaya, Konstantin P. Kotlyar, Rodion R. Reznik, Yelizaveta I. Girshova, Valentin V. Nikolaev, Michael A. Kaliteevski, George E. Cirlin
Publikováno v:
Nanomaterials, Vol 13, Iss 6, p 1069 (2023)
Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver nanoparticles are investigated in the present study. It is shown that plasmonic nanoparticles induce the redistribution of room temperature photoluminescence between short
Externí odkaz:
https://doaj.org/article/fe201f3552c64d8e9d7469e02f758f4e
Autor:
Vladislav O. Gridchin, Liliia N. Dvoretckaia, Konstantin P. Kotlyar, Rodion R. Reznik, Alesya V. Parfeneva, Anna S. Dragunova, Natalia V. Kryzhanovskaya, Vladimir G. Dubrovskii, George E. Cirlin
Publikováno v:
Nanomaterials, Vol 12, Iss 14, p 2341 (2022)
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epit
Externí odkaz:
https://doaj.org/article/fdfaf785cc964d15beac85ae7e79a4cd
Autor:
Alexey Kuznetsov, Prithu Roy, Valeriy M. Kondratev, Vladimir V. Fedorov, Konstantin P. Kotlyar, Rodion R. Reznik, Alexander A. Vorobyev, Ivan S. Mukhin, George E. Cirlin, Alexey D. Bolshakov
Publikováno v:
Nanomaterials, Vol 12, Iss 2, p 241 (2022)
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nano
Externí odkaz:
https://doaj.org/article/3e14a814e70d443bbc05e6f6b00d9120
Autor:
Rodion R. Reznik, George E. Cirlin, Konstantin P. Kotlyar, Igor V. Ilkiv, Nika Akopian, Lorenzo Leandro, Valentin V. Nikolaev, Alexey V. Belonovski, Mikhail A. Kaliteevski
Publikováno v:
Nanomaterials, Vol 11, Iss 11, p 2894 (2021)
Control of directionality of emissions is an important task for the realization of novel nanophotonic devices based on nanowires. Most of the existing approaches providing high directionality of the light emitted from nanowires are based on the utili
Externí odkaz:
https://doaj.org/article/9a4b15c95697484f95a21ce139d24230
Autor:
Artem I. Khrebtov, Vladimir V. Danilov, Anastasia S. Kulagina, Rodion R. Reznik, Ivan D. Skurlov, Alexander P. Litvin, Farrukh M. Safin, Vladislav O. Gridchin, Dmitriy S. Shevchuk, Stanislav V. Shmakov, Artem N. Yablonskiy, George E. Cirlin
Publikováno v:
Nanomaterials, Vol 11, Iss 3, p 640 (2021)
The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP n
Externí odkaz:
https://doaj.org/article/aaa9db30a697488b97b5b9d6a36962f0
Autor:
G. E. Cirlin, Rodion R. Reznik, A. I. Khrebtov, I. D. Skurlov, I. V. Shtrom, A. S. Kulagina, A. P. Litvin, V. V. Danilov, E. S. Gromova
Publikováno v:
Semiconductors. 54:1141-1146
The results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44be6331e15eed32eb484904ab1f700d
https://doi.org/10.1134/s1063782620090158
https://doi.org/10.1134/s1063782620090158
Autor:
Alexey E. Zhukov, Rustam A. Khabibullin, Rodion R. Reznik, V. I. Gavrilenko, K. V. Maremyanin, S. V. Morozov, G. E. Cirlin
Publikováno v:
Semiconductors. 54:1092-1095
Data on the synthesis of structures for a quantum cascade terahertz laser in the AlGaAs/GaAs material system on GaAs substrates using the molecular-beam-epitaxy method and their characterization are presented. The specific features necessary for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2220dc5eec0b2e3fe06ad1715c6142e
https://doi.org/10.1134/s1063782620090298
https://doi.org/10.1134/s1063782620090298