Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Roderic Beresford"'
Publikováno v:
Sensors and Actuators B: Chemical. 187:455-460
This work reports the fabrication details used to prepare gold nanoelectrode arrays as working electrodes in a microfluidic electrochemical sensor system. We emphasize on the design criteria and the methods used to construct the nanoelectrode arrays
Autor:
Roderic Beresford, Yana Cheng
Publikováno v:
Nano Letters. 13:614-617
Si nanoscale dots are synthesized on AlN/Si(111) by molecular beam epitaxy. A dot density of 2.2 × 10(11) cm(-2) with a mean radius of 5.6 ± 2.8 nm is obtained in Volmer-Weber growth mode. A double Si coverage leads to a decrease in dot density and
Publikováno v:
Biosensors and Bioelectronics. 26:2927-2933
A microfluidic biosensor chip with an embedded three-electrode configuration is developed for the study of the voltammetric response of a nanoelectrode array with controlled inter-electrode distance in a nanoliter-scale sample volume. The on-chip thr
Autor:
Roderic Beresford
Publikováno v:
Solid-State Electronics. 51:136-141
A derivation of the interband tunneling transmission coefficient is given based on analytical solution of the two-band model and explicit account of the conservation of flux. The conventional estimate is obtained only in limiting cases. In general, t
Publikováno v:
IEEE Sensors Journal. 6:1395-1402
This paper reports the implementation and calibration of a microscopic three-electrode electrochemical sensor integrated with a polydimethylsiloxane (PDMS) microchannel to form a rapid prototype chip technology that is used to develop sensing modules
Publikováno v:
Journal of Crystal Growth. 287:509-513
Highly ordered arrays of InAs quantum dots are grown on GaAs (1 0 0) substrates that have been patterned non-lithographically using self-organized anodized aluminum oxide membranes as an etching mask. The process and benefit of pre-coating the substr
Autor:
Roderic Beresford
Publikováno v:
Journal of Applied Physics. 95:6216-6224
The full-zone k⋅p method of band structure calculation is extended to crystals of wurtzite structure, point group C6v. The form of the momentum matrix elements as allowed by symmetry is deduced and used to model the dispersion relations throughout
Autor:
Roderic Beresford
Publikováno v:
Semiconductor Science and Technology. 18:973-977
Detailed understanding of the atomic-level mechanisms of oxidation is required to achieve control of ultrathin oxide growth processes. Published models support the widely accepted empirical description of Massoud et al (Massoud H Z, Plummer J D and I
Publikováno v:
Journal of Applied Physics. 94:948-957
The model developed here describes compressive stress evolution during the growth of continuous, polycrystalline films (i.e., beyond the point where individual islands have coalesced into a continuous film). These stresses are attributed to the inser
Publikováno v:
Journal of Crystal Growth. 251:106-111
The relaxation of InGaAs/GaAs thin films grown by molecular beam epitaxy is studied by an in situ optical stress sensor technique. Profiles of normalized film strain versus thickness are obtained for several growth temperatures and two InGaAs composi