Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Rockey Gupta"'
Publikováno v:
2023 IEEE International Students' Conference on Electrical, Electronics and Computer Science (SCEECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f59dca7da459f018861c727629b50b0
https://doi.org/10.1109/sceecs57921.2023.10063005
https://doi.org/10.1109/sceecs57921.2023.10063005
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811949746
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86b852fb83989267108f984821be1ef9
https://doi.org/10.1007/978-981-19-4975-3_21
https://doi.org/10.1007/978-981-19-4975-3_21
Publikováno v:
IETE Journal of Research. 68:2305-2311
Full adder is one of the fundamental components of very large-scale digital integrated systems, capable of performing all arithmetic operations. High-performance full adders are always desi...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0247e649aaa253194dac478c5be9a08
https://doi.org/10.1080/03772063.2019.1700833
https://doi.org/10.1080/03772063.2019.1700833
Publikováno v:
Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering). 11:142-148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72e9ce5274cfa8e2067e89f2de9c2108
https://doi.org/10.2174/2352096510666171207163840
https://doi.org/10.2174/2352096510666171207163840
Publikováno v:
Optical Materials. 119:111362
Zinc oxy-sulphide (ZnO1-xSx) has proven to be the most promising material for electron transport layer (ETL) as a replacement of CdS in thin film and perovskite solar cells due to its ability to tune the bandgap energy (2.7–3.8 eV). FASnI3 (CH4N2Sn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::497264808f8349f2c5ecacf4422bd68b
https://doi.org/10.1016/j.optmat.2021.111362
https://doi.org/10.1016/j.optmat.2021.111362
Publikováno v:
AEU - International Journal of Electronics and Communications. 76:125-131
This paper presents a novel low power and high speed 4-bit comparator extendable to 64-bits using floating-gate MOSFET (FGMOS). Here, we have exploited the unique feature of FGMOS wherein the effective voltage at its floating-gate is the weighted sum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cabf651347d45bebf7e9a8c37c14fd74
https://doi.org/10.1016/j.aeue.2017.04.004
https://doi.org/10.1016/j.aeue.2017.04.004
Publikováno v:
Microelectronic Engineering. 162:75-78
Low power consumption has become one of the primary requirements in the design of digital VLSI circuits in recent years. With scaling down of device dimensions, the supply voltage also needs to be scaled down for reliable operation. The speed of conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fdab733b279478b5b3bb074cb1bc63b
https://doi.org/10.1016/j.mee.2016.05.011
https://doi.org/10.1016/j.mee.2016.05.011
Publikováno v:
Electrical and Electronics Engineering: An International Journal. 5:37-49
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::689a311a70e85a7d4acf460371129a23
https://doi.org/10.14810/elelij.2016.5204
https://doi.org/10.14810/elelij.2016.5204
Publikováno v:
2016 3rd International Conference on Emerging Electronics (ICEE).
This paper presents the design of high performance ring oscillator using quasi floating-gate MOSFET (QFGMOS) which is suitable for low voltage and low power design in the modern submicron technologies. The floating gate MOSFET has been employed to ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b468bdb281cf3a77fb425af2e968acee
https://doi.org/10.1109/icemelec.2016.8074421
https://doi.org/10.1109/icemelec.2016.8074421
Autor:
Rockey Gupta, Susheel Sharma
Publikováno v:
Microelectronics Journal. 43:439-443
This paper demonstrates the use of quasi-floating gate MOSFET (QFGMOS) in the design of a low voltage current mirror and highlights its advantages over the floating gate MOSFET (FGMOS). The use of resistive compensation has been shown to enhance the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb85251cb00a93ab6b2b10794cf60250
https://doi.org/10.1016/j.mejo.2012.04.006
https://doi.org/10.1016/j.mejo.2012.04.006