Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling.

Autor: Bailey, N. J.¹ (AUTHOR), Rockett, T. B. O.¹ (AUTHOR), Flores, S.² (AUTHOR), Reyes, D. F.² (AUTHOR), David, J. P. R.¹ (AUTHOR), Richards, R. D.¹ (AUTHOR) r.richards@sheffield.ac.uk

Publikováno v: Scientific Reports. 1/17/2022, Vol. 12 Issue 1, p1-8. 8p.

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Electron levels of defects in In(Ga)As/(In)GaAs nanostructures: A review.

Autor: Datsenko, O. I.¹ oleksandr.datsenko@knu.ua, Kravchenko, V. M.¹ kravm@knu.ua, Golovynskyi, S.² serge@szu.edu.cn

Publikováno v: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2024, Vol. 27 Issue 2, p194-207. 14p.

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy.

Autor: Semyagin, B. R.¹ (AUTHOR), Kolesnikov, A. V.¹ (AUTHOR), Putyato, M. A.¹ (AUTHOR), Preobrazhenskii, V. V.¹ (AUTHOR), Popova, T. B.² (AUTHOR), Ushanov, V. I.² (AUTHOR), Chaldyshev, V. V.² (AUTHOR) chald.gvg@mail.ioffe.ru

Publikováno v: Semiconductors. Sep2023, Vol. 57 Issue 9, p405-409. 5p.

Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt.

Autor: Khvostikova O; Ioffe Institute, Politechnicheskaya 26, St. Petersburg, Russia, 194021., Vlasov A; Ioffe Institute, Politechnicheskaya 26, St. Petersburg, Russia, 194021., Ber B; Ioffe Institute, Politechnicheskaya 26, St. Petersburg, Russia, 194021., Salii R; Ioffe Institute, Politechnicheskaya 26, St. Petersburg, Russia, 194021., Khvostikov V; Ioffe Institute, Politechnicheskaya 26, St. Petersburg, Russia, 194021. vlkhv@scell.ioffe.ru.

Publikováno v: Scientific reports [Sci Rep] 2024 Jan 16; Vol. 14 (1), pp. 1334. Date of Electronic Publication: 2024 Jan 16.