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pro vyhledávání: '"Roch, Jonas Gaël"'
Autor:
Roch, Jonas Gaël, Miserev, Dmitry, Froehlicher, Guillaume, Leisgang, Nadine, Sponfeldner, Lukas, Watanabe, Kenji, Taniguchi, Takashi, Klinovaja, Jelena, Loss, Daniel, Warburton, Richard John
Publikováno v:
Phys. Rev. Lett. 124, 187602 (2020)
Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at hig
Externí odkaz:
http://arxiv.org/abs/1911.10238
Autor:
Roch, Jonas Gaël
Moore's law has predicted feature sizes in the semiconductor industry for more than several decades: the number of transistors on an integrated circuit doubles every two years. However, as the feature sizes in transistors approach the nanometer scale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17c5db6b817773abac1bc6f2ae8e52f0
https://edoc.unibas.ch/71617/
https://edoc.unibas.ch/71617/
Autor:
Roch JG; Department of Physics, University of Basel, Basel, Switzerland. jonasgael.roch@unibas.ch., Froehlicher G; Department of Physics, University of Basel, Basel, Switzerland., Leisgang N; Department of Physics, University of Basel, Basel, Switzerland., Makk P; Department of Physics, University of Basel, Basel, Switzerland.; Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group of the Hungarian Academy of Sciences, Budapest, Hungary., Watanabe K; National Institute for Material Science, Tsukuba, Japan., Taniguchi T; National Institute for Material Science, Tsukuba, Japan., Warburton RJ; Department of Physics, University of Basel, Basel, Switzerland.
Publikováno v:
Nature nanotechnology [Nat Nanotechnol] 2019 May; Vol. 14 (5), pp. 432-436. Date of Electronic Publication: 2019 Mar 11.