Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Rocco J. Parro"'
Autor:
Christian A. Zorman, Rocco J. Parro
Publikováno v:
Silicon Carbide: Growth, Defects, and Novel Applications, Volume 1
Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70838249720e26f3c80d5e6d88834ef2
https://doi.org/10.1002/9783527629053.ch17
https://doi.org/10.1002/9783527629053.ch17
Autor:
Nicholas C. Varaljay, Sloan Zimmerman, Rocco J. Parro, Christian A. Zorman, Maximilian C. Scardelletti
Publikováno v:
Solid-State Electronics. 52:1647-1651
This paper reports an effort to develop amorphous silicon carbide (a-SiC) films for use in shunt capacitor RF MEMS microbridge-based switches. The films were deposited using methane and silane as the precursor gases. Switches were fabricated using 50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99e5c3b22cdcbba057df0fb4af402f6a
https://doi.org/10.1016/j.sse.2008.06.004
https://doi.org/10.1016/j.sse.2008.06.004
Publikováno v:
SPIE Proceedings.
This paper reports our effort to develop amorphous hydrogenated silicon carbide (a-SiC:H) films specifically designed for MEMS-based microbridges using methane and silane as the precursor gases. In our work, the a-SiC:H films were deposited in a simp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a545fa390152baf4531abf3f52ff1de
https://doi.org/10.1117/12.704705
https://doi.org/10.1117/12.704705
Autor:
Christian A. Zorman, Maximillian Scardelletti, A.E. Hess, Jeremy Dunning, Rocco J. Parro, Jiangang Du
Publikováno v:
Scopus-Elsevier
This paper reports our effort to develop amorphous silicon carbide (a-SiC) films for use as hermetic thin film coatings for mechanically-flexible neural electrodes. In our work, the a-SiC films were deposited by plasma enhanced chemical vapor deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76a485d773d8aac76a135702a42e7ee6
http://www.scopus.com/inward/record.url?eid=2-s2.0-70349228097&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-70349228097&partnerID=MN8TOARS
