Zobrazeno 1 - 10
of 861
pro vyhledávání: '"Roccaforte F"'
Autor:
Fiorenza, P., Cordiano, F., Alessandrino, S. M., Russo, A., Zanetti, E., Saggio, M., Bongiorno, C., Giannazzo, F., Roccaforte, F.
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Externí odkaz:
http://arxiv.org/abs/2410.19545
Autor:
Schilirò, E., Panasci, S. E., Mio, A. M., Nicotra, G., Agnello, S., Pecz, B., Radnoczi, G. Z., Deretzis, I., La Magna, A., Roccaforte, F., Nigro, R. Lo, Giannazzo, F.
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD pro
Externí odkaz:
http://arxiv.org/abs/2305.07933
Autor:
Giannazzo, F., Panasci, S. E., Schilirò, E., Greco, G., Roccaforte, F., Sfuncia, G., Nicotra, G., Cannas, M., Agnello, S., Frayssinet, E., Cordier, Y., Michon, A., Koos, A., Pécz, B.
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sap
Externí odkaz:
http://arxiv.org/abs/2304.12213
Publikováno v:
Nanoscale Research Letters, Vol 4, Iss 3, Pp 262-268 (2009)
Abstract Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Au films on SiO2using the atomic force microscopy technique. By the analyses of the dependence of the roughness, σ, of the surface roughness power,P(
Externí odkaz:
https://doaj.org/article/8817f54906a44b7896f0e28000724500
Publikováno v:
Nanoscale Research Letters, Vol 3, Iss 11, Pp 454-460 (2008)
Abstract We report on the calculations of the cohesive energy, melting temperature and vacancy formation energy for Au nanocrystals with different size supported on and embedded in SiO2. The calculations are performed crossing our previous data on th
Externí odkaz:
https://doaj.org/article/22d4f2a413594e35a0f8a41bb8415a8f
Publikováno v:
Nanoscale Research Letters, Vol 2, Iss 5, Pp 240-247 (2007)
AbstractWe report on the equilibrium shape and atomic structure of thermally-processed Au nanocrystals (NCs) as determined by high resolution transmission electron microscopy (TEM). The NCs were either deposited on SiO2surface or embedded in SiO2laye
Externí odkaz:
https://doaj.org/article/ae0f8dbdbdc841569a2c83395bcd5d59
Autor:
Panasci, S. E., Schilirò, E., Migliore, F., Cannas, M., Gelardi, F. M., Roccaforte, F., Giannazzo, F., Agnello, S.
Publikováno v:
Appl. Phys. Lett. 119, 093103 (2021)
The gold-assisted exfoliation is a very effective method to produce large-area ($cm^2$-scale) membranes of molybdenum disulfide ($MoS_2$) for electronics. However, the strong $MoS_2/Au$ interaction, beneficial for the exfoliation process, has a stron
Externí odkaz:
http://arxiv.org/abs/2108.09544
Autor:
Panasci, S. E., Schilirò, E., Greco, G., Cannas, M., Gelardi, F. M., Agnello, S., Roccaforte, F., Giannazzo, F.
Publikováno v:
ACS Appl. Mater. Interfaces 2021
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vd
Externí odkaz:
http://arxiv.org/abs/2104.13278
Autor:
Giannazzo, F., Dagher, R., Schilirò, E., Panasci, S. E., Greco, G., Nicotra, G., Roccaforte, F., Agnello, S., Brault, J., Cordier, Y., Michon, A.
Publikováno v:
Nanotechnology 32 (2020) 015705
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates
Externí odkaz:
http://arxiv.org/abs/2009.08673
Autor:
Fiorenza, P., Alessandrino, M., Carbone, B., Di Martino, C., Russo, A., Saggio, M., Venuto, C., Zanetti, E., Bongiorno, C., Giannazzo, F., Roccaforte, F.
Publikováno v:
Materials Science Forum 1004, (2020) 433-438
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence b
Externí odkaz:
http://arxiv.org/abs/2009.04846