Zobrazeno 1 - 10
of 1 946
pro vyhledávání: '"Roccaforte A"'
Autor:
Fiorenza, Patrick, Zignale, Marco, Camalleri, Marco, Scalia, Laura, Zanetti, Edoardo, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are investigated, with a special focus on the modifications of the energy p
Externí odkaz:
http://arxiv.org/abs/2410.21235
Autor:
Fiorenza, P., Cordiano, F., Alessandrino, S. M., Russo, A., Zanetti, E., Saggio, M., Bongiorno, C., Giannazzo, F., Roccaforte, F.
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Externí odkaz:
http://arxiv.org/abs/2410.19545
Autor:
Fiorenza, Patrick, Zignale, Marco, Zanetti, Edoardo., Alessandrino, Mario S., Carbone, Beatrice, Guarnera, Alfio, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. The suitability of scanning probe methods based on atomic force microsco
Externí odkaz:
http://arxiv.org/abs/2407.13370
Autor:
Schilirò, E., Panasci, S. E., Mio, A. M., Nicotra, G., Agnello, S., Pecz, B., Radnoczi, G. Z., Deretzis, I., La Magna, A., Roccaforte, F., Nigro, R. Lo, Giannazzo, F.
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD pro
Externí odkaz:
http://arxiv.org/abs/2305.07933
Autor:
Giannazzo, F., Panasci, S. E., Schilirò, E., Greco, G., Roccaforte, F., Sfuncia, G., Nicotra, G., Cannas, M., Agnello, S., Frayssinet, E., Cordier, Y., Michon, A., Koos, A., Pécz, B.
The integration of two-dimensional $MoS_{2}$ with $GaN$ recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial $GaN$ templates on sap
Externí odkaz:
http://arxiv.org/abs/2304.12213
Autor:
Greco, Giuseppe, Fiorenza, Patrick, Schilirò, Emanuela, Bongiorno, Corrado, Di Franco, Salvatore, Coulon, Pierre-Marie, Frayssinet, Eric, Bartoli, Florian, Giannazzo, Filippo, Alquier, Daniel, Cordier, Yvon, Roccaforte, Fabrizio
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of
Externí odkaz:
http://arxiv.org/abs/2304.11680
Autor:
Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Moschetti, Maurizio, Bottari, Cettina, Alessandrino, Mario Santi, Iucolano, Ferdinando, Roccaforte, Fabrizio
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations under stre
Externí odkaz:
http://arxiv.org/abs/2212.06442
The Bloch Sphere visualization of the possible states of a single qubit has proved a useful pedagogical and conceptual tool as a one-to-one map between qubit states and points in a 3-D space. However, understanding many important concepts of quantum
Externí odkaz:
http://arxiv.org/abs/2212.03448
Autor:
Vivona, Marilena, Bellocchi, Gabriele, Nigro, Raffaella Lo, Rascuná, Simone, Roccaforte, Fabrizio
Publikováno v:
Semicond. Sci. Technol. 37 (2022) 015012
In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing temperatures from 475 to 700 {\deg} C. For each annealing temperature,
Externí odkaz:
http://arxiv.org/abs/2205.14985
Autor:
Scandurra, Antonino, Ragonese, Paolo, Calabretta, Cristiano, Zahra, Khadisha, Soomary, Liam, Roccaforte, Fabrizio, Greco, Giuseppe, Piluso, Nicolò, Eloisa Castagna, Maria, Iucolano, Ferdinando, Severino, Andrea, Bruno, Elena, Mirabella, Salvo
Publikováno v:
In Applied Surface Science 15 November 2024 674
