Zobrazeno 1 - 10
of 12 672
pro vyhledávání: '"Roccaforte A"'
Autor:
Stefania Spina
Publikováno v:
Italiano LinguaDue, Vol 14, Iss 2 (2023)
Externí odkaz:
https://doaj.org/article/d17b3b353dd1437ebc8931ae384ca1de
Autor:
Fiorenza, Patrick, Zignale, Marco, Camalleri, Marco, Scalia, Laura, Zanetti, Edoardo, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are investigated, with a special focus on the modifications of the energy p
Externí odkaz:
http://arxiv.org/abs/2410.21235
Autor:
Fiorenza, P., Cordiano, F., Alessandrino, S. M., Russo, A., Zanetti, E., Saggio, M., Bongiorno, C., Giannazzo, F., Roccaforte, F.
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Externí odkaz:
http://arxiv.org/abs/2410.19545
Autor:
Fiorenza, Patrick, Zignale, Marco, Zanetti, Edoardo., Alessandrino, Mario S., Carbone, Beatrice, Guarnera, Alfio, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. The suitability of scanning probe methods based on atomic force microsco
Externí odkaz:
http://arxiv.org/abs/2407.13370
Autor:
Robert M. Pringle, Rachael Lawrence-Lodge, Lucas Enrico, Sainbileg Undrakhbold, Gerhard E. Overbeck, Don Thompson, Peter Manning, Bryan L. Foster, Mária Höhn, Mohammad Hassan Jouri, Ruijun Long, Kathy Roccaforte, Cameron N. Carlyle, Bazartseren Boldgiv, Alex Bittel, Todd M. Palmer, Martin Zobel, M. van Rooyen, James F. Cahill, Jason D. Fridley, J. B. Wilson, Jason Pither, Marcelo Cabido, Lauchlan H. Fraser, Giandiego Campetella, Diana Askarizadeh, Sandra Cristina Müller, David J. Ensing, Radnaakhand Tungalag, Gisela C. Stotz, Anna-Maria Csergo, Heath W. Garris, Shu-Ichi Sugiyama, Hugh A. L. Henry, Sandra Díaz, Talita Zupo, Jonathan A. Bennett, John N. Klironomos, Ofer Cohen, Valério D. Pillar, Camilla Wellstein, Carlos Nabinger, Carl Beierkuhnlein, Kadri Koorem, Alessandra Fidelis, Randall J. Mitchell, Leslie R. Brown, Kamal Naseri, Mari Pesek, Anke Jentsch, Marcelo Sternberg, Stefano Chelli, Amanda Schmidt, Szilárd Szentes, Mari Moora, Ilsi Iob Boldrini, Jacob R. Goheen, Edward W. Bork, Reinhold Stahlmann, Zhanhuan Shang, Sándor Bartha, Sheena Parsons
Publikováno v:
Science (New York, N.Y.). 372(6545)
Autor:
Hanks, Patrick, Lenarčič, Simon
Publikováno v:
Dictionary of American Family Names, 2 ed., 2022.
Autor:
Spina, Stefania
Publikováno v:
ItalianoLinguadue; Vol. 14 No. 2 (2022): ITALIANO LINGUADUE; 781 – 785
Italiano LinguaDue; V. 14 N. 2 (2022): ITALIANO LINGUADUE; 781 – 785
Italiano LinguaDue; V. 14 N. 2 (2022): ITALIANO LINGUADUE; 781 – 785
Autor:
Paolo Battistel
La storia dell'Europa moderna è attraversata da leggende radicate nella tradizione e nella religione. Una di quelle più intriganti ha per protagonista l'Ordine dei Rosacroce, legato ai Templari e, più in generale, alle alterne vicende della millen
Autor:
Schilirò, E., Panasci, S. E., Mio, A. M., Nicotra, G., Agnello, S., Pecz, B., Radnoczi, G. Z., Deretzis, I., La Magna, A., Roccaforte, F., Nigro, R. Lo, Giannazzo, F.
In this paper, the atomic layer deposition (ALD) of ultra-thin films (<4 nm) of $Al_{2}O_{3}$ and $HfO_{2}$ on Au-supported monolayer (1L) $MoS_{2}$ is investigated, providing an insight on the nucleation mechanisms in the early stages of the ALD pro
Externí odkaz:
http://arxiv.org/abs/2305.07933