Zobrazeno 1 - 10
of 211
pro vyhledávání: '"Robinson, J. T."'
Autor:
Coslovich, G., Smith, R. P., Shi, S. -F., Buss, J. H., Robinson, J. T., Wang, F., Kaindl, R. A.
We employ ultrabroadband terahertz (THz) spectroscopy to expose the high-frequency transport properties of Dirac fermions in monolayer graphene. By controlling the carrier concentration via tunable electrical gating, both equilibrium and transient op
Externí odkaz:
http://arxiv.org/abs/2410.19999
Autor:
Nath, A., Currie, M., Wheeler, V. D., Tadjer, M. J., Koehler, A. D., Robinson, Z. R., Sridhara, K., Hernandez, S. C., Wollmershauser, J. A., Robinson, J. T, Myers-Ward, R. L., Eddy, Jr., C. R., Rao, M. V., Gaskill, D. K.
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance.
Externí odkaz:
http://arxiv.org/abs/1411.5114
We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz photocondu
Externí odkaz:
http://arxiv.org/abs/1410.7495
Terahertz (THz) Faraday rotation measurements were performed to investigate carrier dynamics in p-type CVD graphene. We used static and time-resolved polarization-sensitive THz transmission measurements in a magnetic field to probe free carriers in G
Externí odkaz:
http://arxiv.org/abs/1410.7499
Autor:
Feenstra, R. M., Srivastava, N., Gao, Qin, Widom, M., Diaconescu, Bogdan, Ohta, Taisuke, Kellogg, G. L., Robinson, J. T., Vlassiouk, I. V.
Publikováno v:
Phys. Rev. B 87, 041406(R) (2013)
Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy range of 0 - 8 eV are found, with the number of minima depending on t
Externí odkaz:
http://arxiv.org/abs/1211.6676
Autor:
Mutus, J. Y., Livadaru, L., Robinson, J. T., Urban, R., Salomons, M. H., Cloutier, M., Sheehan, P. E., Wolkow, R. A.
Point Projection Microscopy (PPM) is used to image suspended graphene using low-energy electrons (100-200eV). Because of the low energies used, the graphene is neither damaged or contaminated by the electron beam. The transparency of graphene is meas
Externí odkaz:
http://arxiv.org/abs/1102.1758
Autor:
Zhou, S. Y., Girit, C. O., Scholl, A., Jozwiak, C. J., Siegel, D. A., Yu, P., Robinson, J. T., Wang, F., Zettl, A., Lanzara, A.
We study the stability of various kinds of graphene samples under soft X-ray irradiation. Our results show that in single layer exfoliated graphene (a closer analogue to two dimensional material), the in-plane carbon-carbon bonds are unstable under X
Externí odkaz:
http://arxiv.org/abs/0909.3867
Publikováno v:
Nano letters Vol. 7 (No. 7), 2009 (2007)
A chemical nanomachining process for the rapid, scalable production of nanostructure assemblies from silicon-on-insulator is demonstrated. The process is based on the spontaneous, local oxidation of Si induced by Au, which is selectively evaporated o
Externí odkaz:
http://arxiv.org/abs/0707.3307
Autor:
Robinson, J. T., Walko, D. A., Arms, D. A., Tinberg, D. S., Evans, P. G., Cao, Y., Liddle, J. A., Rastelli, A., Schmidt, O. G., Dubon, O. D.
In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702003
Autor:
Robinson, J. T.
Publikováno v:
Evolution, 1954 Dec 01. 8(4), 324-334.
Externí odkaz:
https://www.jstor.org/stable/2405779
