Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Robin Khosla"'
Publikováno v:
Results in Optics, Vol 12, Iss , Pp 100444- (2023)
Formamidinium Tin Iodide (FASnI3) based perovskite solar cells (PSC) have captured the interest of scientific community because of wide bandgap and good thermal stability, but limited power conversion efficiency (PCE) restricts their extensive adapta
Externí odkaz:
https://doaj.org/article/0ddc0e8296584738af938fd1d4e1e0b6
Publikováno v:
IEEE Transactions on Electron Devices. 70:1520-1526
Autor:
Sumit Choudhary, Daniel Schwarz, Hannes S. Funk, D. Weishaupt, Robin Khosla, Satinder K. Sharma, Jorg Schulze
Publikováno v:
IEEE Transactions on Electron Devices. 69:2725-2731
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811923074
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c8cb81f6e57b4e73a38b8368830eec6
https://doi.org/10.1007/978-981-19-2308-1_23
https://doi.org/10.1007/978-981-19-2308-1_23
Autor:
Robin Khosla, Satinder K. Sharma
Publikováno v:
ACS Applied Electronic Materials. 3:2862-2897
Publikováno v:
Microsystem Technologies. 27:2925-2934
In this work, Z-axis MEMS accelerometers are investigated with variation in spring topography. The serpentine spring structure demonstrated the optimum sensitivity of MEMS accelerometers due to a large number of beams that reduce the spring constant
Publikováno v:
IEEE Transactions on Nanotechnology. 20:346-355
The quest for the high speed, low power digital logic circuits urge an imperative demand of compatible high-κ dielectric integration on novel Germanium (Ge) based channel material. Here, first ever a methodical nanoscopic and microscopic probes were
Publikováno v:
IEEE Transactions on Electron Devices. 66:3236-3241
A new and interesting field-effect transistor (FET) structure based on multilayer HfS2 as a channel material, integrated with Al $\mu $ -interdigitated electrodes ( $\mu $ -IDEs) and HfO2 as a gate dielectric is reported for the first time. The elect
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:7534-7542
Highly UV sensitive sub-5 nm Sn nanoparticles-Polyaniline (Sn (NPs)-PANI) composite material has been formulated by chemical polymerisation. A thin film of the composite is deposited on Micro-Interdigitated Electrode (µ-IDEs) array for photodetector
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).