Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Robin K. Huang"'
Autor:
Mark Lancaster, Paul Mak, Jason Auxier, Myron R. Pauli, Robert F. Cook, Hector Garcia Martin, Jeffrey Shattuck, Robin K. Huang, Michael Cruz
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVI.
Quantum Cascade Lasers (QCL) are highly efficient, compact, and wavelength-agile devices in Mid-Wavelength InfraRed (MWIR – generally 3.7 – 4.8 microns wavelength) and Long-Wavelength InfraRed (LWIR – generally 8 – 12 microns wavelength). Wal
Autor:
Bien Chann, Mike Cruz, Bryan Lochman, Dan G. Dugmore, Wang Zhou, Parviz Tayebati, James Burgess, Robin K. Huang, Robert F. Cook, Jeff Shattuck
Publikováno v:
Components and Packaging for Laser Systems II.
TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter
Autor:
Allen Hsu, Anish K. Goyal, Joseph P. Donnelly, Antonio Sanchez-Rubio, Christine A. Wang, Robin K. Huang, Qing Hu, George W. Turner, Benjamin S. Williams, D.R. Calawa
Publikováno v:
Journal of Crystal Growth. 312:1157-1164
Strain-compensated (SC) GaInAs/AlInAs/InP multiple-quantum-well structures and quantum cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by organometallic vapor phase epitaxy (OMVPE). The structures were characterized by h
Autor:
Walker R. Chan, Ivan Celanovic, Robin K. Huang, John G. Kassakian, John D. Joannopoulos, Christine A. Wang
Publikováno v:
Solar Energy Materials and Solar Cells. 94:509-514
To aid in the design of low-temperature high-efficiency thermophotovoltaic (TPV) systems, based on low-bandgap photovoltaic (PV) diodes and selective thermal emitters, we developed a detailed model of GaSb and GaInAsSb PV diodes. An equivalent circui
Autor:
George W. Turner, D.R. Calawa, Frederick J. O'Donnell, S.G. Cann, Anish K. Goyal, Antonio Sanchez-Rubio, Joseph P. Donnelly, Leo J. Missaggia, Jason J. Plant, Robin K. Huang, C. A. Wang
Publikováno v:
Journal of Crystal Growth. 310:5191-5197
The growth and characterization of highly strain-balanced (SB) GaInAs/AlInAs/InP quantum-well heterostructures for mid-infrared quantum cascade lasers (QCLs) are reported. Growth conditions were established to provide a step-flow growth mode, which i
Autor:
S. Burger, L. R. Danielson, E. Brown, G. Nichols, Christine A. Wang, P. F. Baldasaro, H. Ehsani, W.F. Topper, G. C. Taylor, Michael K. Connors, K. D. Rahner, Ramon U. Martinelli, S. Anikeev, D.M. Depoy, Z. Shellenbarger, M. W. Dashiell, D. Donetski, J Beausang, Jizhong Li, Serge Luryi, Gregory Belenky, Robin K. Huang, P. Talamo, George W. Turner, P. Fourspring
Publikováno v:
IEEE Transactions on Electron Devices. 53:2879-2891
InxGa1-xAsySb1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range of EG = 0.5 to 0.6 eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are
Publikováno v:
Journal of Electronic Materials. 33:1406-1410
An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on semi-insulating (SI) GaAs substrates. These samples
Publikováno v:
Journal of Crystal Growth. 261:379-384
A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as
Autor:
Robin K. Huang, Francesco Tassone, Yoshihisa Yamamoto, Gregor Weihs, Hui Deng, Mitsuro Sugita
Publikováno v:
Semiconductor Science and Technology. 18:S386-S394
The formation of macroscopic coherence associated with a Bose–Einstein phase transition in excitons has long been sought for. We review our recent observation of related effects of exciton–polariton lasing in a semiconductor microcavity.
Autor:
Jason J. Plant, Robert J. Bailey, James N. Walpole, C.T. Harris, William D. Goodhue, Leo J. Missaggia, George W. Turner, Robin K. Huang, Joseph P. Donnelly, D.E. Mull
Publikováno v:
IEEE Journal of Quantum Electronics. 39:289-298
The slab-coupled optical waveguide laser (SCOWL) concept, recently proposed and demonstrated, is extended to the AlGaAs-InGaAs-GaAs material system. Both 980- and 915-nm SCOWL devices feature a nearly circular large-diameter single-spatial mode that