Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Robin C.J. Wang"'
Autor:
C.S. Wang, Chang-Chun Lee, C.H. Lin, C. C. Chiu, M.N. Chang, Robin C.J. Wang, Kuei-Shu Chang-Liao, Tien-Ko Wang, Kenneth Wu
Publikováno v:
Thin Solid Films. 517:1230-1233
Leakage current and conduction mechanism of low-dielectric constant (low-k) carbon-doped silicon oxide (SiCO) for back-end-of-line (BEOL) dielectric are investigated in this work. Temperature-dependent leakage, Schottky emission and Poole–Frenkel e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e78821211e44457843d6b9b1182820c
https://doi.org/10.1016/j.tsf.2008.06.051
https://doi.org/10.1016/j.tsf.2008.06.051
Autor:
Tien-Ko Wang, Kenneth Wu, A. S. Oates, Jing-Cheng Lin, Chang-Chun Lee, S.C. Lee, Kuei-Shu Chang-Liao, Robin C.J. Wang
Publikováno v:
Thin Solid Films. 516:449-453
In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with wide lead is investigated. Three failure modes are explored and discussed with different failure sites. A driving force for void migration resulted from hydrostat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55d5adc6ba13e659d606e81a466e9ad3
https://doi.org/10.1016/j.tsf.2007.07.147
https://doi.org/10.1016/j.tsf.2007.07.147
Autor:
L. D. Chen, Kuei-Shu Chang-Liao, C. C. Chiu, Chang-Chun Lee, Kenneth Wu, Robin C.J. Wang, A. S. Oates
Publikováno v:
Microelectronic Engineering. 84:2697-2701
Copper stress migration (SM) at narrow metal finger connected with wide lead is investigated in this work. Voiding phenomenon is explored with respect to specific failure site. Metal geometric factors including lead width, lead length and finger leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bfa5334e53e818f28a8316617e5af3e
https://doi.org/10.1016/j.mee.2007.05.035
https://doi.org/10.1016/j.mee.2007.05.035
Publikováno v:
Microelectronics Reliability. 46:1673-1678
Microstructure effect of Cu/low-k interconnect, which is substantially affected by process condition or manufacturing deviation, is a dominated factors for copper stress and critical to the formation of stress-induced voiding (SIV). In this work, SIV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::834233626aaaaaf43c67ea4399cb3617
https://doi.org/10.1016/j.microrel.2006.07.053
https://doi.org/10.1016/j.microrel.2006.07.053
Autor:
S.-F. Chen, C. C. Chiu, K. Wu, Y.-H. Lee, Robin C.J. Wang, S.Y. Lee, J.Y. Cheng, Jing-Cheng Lin
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
Stress-induced voiding (SIV) at a narrow metal line connected to a wide metal plate is investigated for Cu/low-k interconnects. Different from the traditional stress migration failure modes of voiding underneath the via or inside the via, new failure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d419024408a022745f26c581e34b2408
https://doi.org/10.1109/irps.2012.6241858
https://doi.org/10.1109/irps.2012.6241858
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
In this study, Triangular Voltage Sweep (TVS) is shown to be an effective way for quantifying the amounts of free Cu ions in porous low-k film. Free Cu ions at the interface that correlate with the Inter-Metal Dielectric (IMD) TDDB lifetime is also d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc4d4684fa94c6929156dee718106bd
https://doi.org/10.1109/irps.2009.5173320
https://doi.org/10.1109/irps.2009.5173320
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual; 2005, p36-40, 5p
Publikováno v:
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743); 2004, p103-106, 4p
Autor:
Doong, K.Y.Y., Wang, R.C.J., Lin, S.C., Hung, L.J., Chiu, C.C., Su, D., Wu, K., Young, K.L., Peng, Y.K.
Publikováno v:
2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual; 2003, p156-160, 5p
Autor:
Wang, R.C.J., Su, D.S., Yang, C.T., Chen, D.H., Doong, Y.Y., Shih, J.R., Lee, S.Y., Chiu, C.C., Peng, Y.K., Yue, J.T.
Publikováno v:
7th International Symposium on Plasma & Process-Induced Damage; 2002, p166-168, 3p