Oxides based resistive switching memories

Autor: Zahit Evren Kaya, Christian Wenger, Ozgur Yavuzcetin, Seref Kalem, Saffet Yildirim, S.B. Tekin, Robin Roelofs, Eric Jalaguier

Publikováno v: Oxide-based Materials and Devices XII.

This paper presents recent progress in resistive oxide memories and their integration into advanced embedded nonvolatile memory technology nodes. With the downscaling trends in emerging semiconductor manufacturing and novel user needs such as higher

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::67647346eb25cd9864d391e9f1ce1b06
https://doi.org/10.1117/12.2585681

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO

Autor: Alessandro, Grossi, Eduardo, Perez, Cristian, Zambelli, Piero, Olivo, Enrique, Miranda, Robin, Roelofs, Jacob, Woodruff, Petri, Raisanen, Wei, Li, Michael, Givens, Ioan, Costina, Markus Andreas, Schubert, Christian, Wenger

Publikováno v: Scientific Reports

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::f55cdec20c3bdb19826ed4ada5e4362a
https://pubmed.ncbi.nlm.nih.gov/30042433

Room-temperature ALD of metal oxide thin films by energy-enhanced ALD

Autor: R Robin Roelofs, SE Stephen Potts, HB Harald Profijt, Wilhelmus M. M. Kessels

Publikováno v: Pacific RIM meeting on electrochemical and solid-state science, (PRIME), October 7-12 2012, Honolulu Hawaii, 93-103
STARTPAGE=93;ENDPAGE=103;TITLE=Pacific RIM meeting on electrochemical and solid-state science, (PRIME), October 7-12 2012, Honolulu Hawaii
Chemical Vapor Deposition, 19(4-6), 125-133. Wiley-VCH Verlag

Room temperature ALD (RT-ALD) processes are of interest for applications using temperature-sensitive substrates, yet they are not so commonly reported. The challenges associated with RT-ALD arise when surface groups are not sufficiently reactive towa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d12fdce1a36f2ef1bf7d27984c1b3126
https://research.tue.nl/en/publications/cfa9f0af-ef64-41cf-8ad4-13258ad81266

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Autor: Benoit Bakeroot, Robin Roelofs, Stefaan Decoutere, Steve Stoffels, Xuanwu Kang, Guido Groeseneken, Brice De Jaeger, Marleen Van Hove, Denis Marcon, Dennis Lin, Tian-Li Wu

Publikováno v: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

© 2015 IEEE. The selection of the gate dielectric is one of the most critical stability issues in recessed gate AlGaN/GaN transistors. In this work, we show that the quality of the gate dielectric has a strong impact on: 1) the threshold voltage (VT

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9673e00c6ad8a6bce5d043991a9f6f29
https://doi.org/10.1109/ispsd.2015.7123430

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Autor: Stefaan Decoutere, Denis Marcon, Steve Stoffels, Jacopo Franco, Benoit Bakeroot, H. C. Lin, Brice De Jaeger, Guido Groeseneken, Tian-Li Wu, Marleen Van Hove, Robin Roelofs

Publikováno v: APPLIED PHYSICS LETTERS

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-gm), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si3N4, R

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e825f4129e0ced526018030b2eab272
https://hdl.handle.net/1854/LU-6972789