Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Robin, Ahrling"'
Autor:
Johannes Boy, Martin Handwerg, Robin Ahrling, Rüdiger Mitdank, Günter Wagner, Zbigniew Galazka, Saskia F. Fischer
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022526-022526-6 (2019)
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped β-Ga2O3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of Sβ-Ga2O3-
Externí odkaz:
https://doaj.org/article/f4d8782c976f4c38b5d2e99310d973bd
Autor:
R. Mitdank, Saskia F. Fischer, Robin Ahrling, Johannes Boy, Günter Wagner, Olivio Chiatti, Martin Handwerg, Zbigniew Galazka
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0aed221c1b70c5d7597040c4a195e80a
https://doi.org/10.1038/s41598-019-49238-2
https://doi.org/10.1038/s41598-019-49238-2
Autor:
Robin, Ahrling, Johannes, Boy, Martin, Handwerg, Olivio, Chiatti, Rüdiger, Mitdank, Günter, Wagner, Zbigniew, Galazka, Saskia F, Fischer
Publikováno v:
Scientific Reports
Thin films of the wide band gap semiconductor β-Ga2O3 have a high potential for applications in transparent electronics and high power devices. However, the role of interfaces remains to be explored. Here, we report on fundamental limits of transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5dac6c56e02fd657c6086d4f34a19f24
https://pubmed.ncbi.nlm.nih.gov/31511538
https://pubmed.ncbi.nlm.nih.gov/31511538
Autor:
Günter Wagner, Zbigniew Galazka, R. Mitdank, Saskia F. Fischer, Martin Handwerg, Robin Ahrling, Johannes Boy
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022526-022526-6 (2019)
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase grown, silicon doped β-Ga2O3 thin films was measured relative to aluminum. For room temperature, we found the relative Seebeck coefficient of Sβ-Ga2O3-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ddd3fab1fbcf0559a5e9fd8241fecb1
https://doaj.org/article/f4d8782c976f4c38b5d2e99310d973bd
https://doaj.org/article/f4d8782c976f4c38b5d2e99310d973bd