Výsledky vyhledávání - "Roberto Tinti"

Akademický článek

Compact Model Parameter Extraction via Derivative-Free Optimization

Autor: Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen Boyd, Srabanti Chowdhury

Publikováno v: IEEE Access, Vol 12, Pp 123224-123235 (2024)

In this paper, we address the problem of compact model parameter extraction to simultaneously extract tens of parameters via derivative-free optimization. Traditionally, parameter extraction is performed manually by dividing the complete set of param

Externí odkaz: https://doaj.org/article/0dcf7a2591e947b6bcf6640c37b61d9e

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Giovanni Paolo Maggioni, Roberto Tinti, Paolo Taviani (a cura di), Il Purgatorio di san Patrizio. Documenti letterari e testimonianze di pellegrinaggio (secc. XII–XVI), Firenze (SISMEL – Edizioni del Galluzzo) 2018

Autor: Isaïa, Marie-Céline

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57aad355620457cbd43699930ed1cb49

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Rezension: Giovanni Paolo Maggioni / Roberto Tinti / Paolo Taviani (Hg.): Il Purgatorio di San Patrizio. Documenti letterari e testimonianze di pellegrinaggio (secc. XII–XVI) (rezensiert von Robert Bartlett)

Autor: Bartlett, Robert

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77a705607202c21b7a3d1e371d78608b

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Il Purgatorio di San Patrizio: Documenti letterari e testimonianze di pellegrinaggio (secc. XII–XVI). G. P. Maggioni, Roberto Tinti, and Paolo Taviani, eds. Quaderni di 'Hagiographica' 13. Florence: SISMEL Edizioni del Galluzzo, 2018. clxxii + 572 pp. + 9 color pls. €58

Autor: Richard Gyug

Publikováno v: Renaissance Quarterly. 72:1481-1482

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5d34f7d3bad786aa627bf1b8ae15c069
https://doi.org/10.1017/rqx.2019.421

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RF GaN Device Model Survey and Model Parameter Extraction Flows

Autor: Ma Long, Mark Dunn, Roberto Tinti, Raj Sodhi

Publikováno v: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).

GaN (Gallium-Nitride) devices continue to advance in market acceptance for 5G, radar, and power electronics due to their high-power handling capability and linearity. GaN technology outperforms other RF technologies because it can simultaneously offe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9da885cd26ea370da35e07f8d6b01e98
https://doi.org/10.1109/icsict49897.2020.9278132

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