Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Roberto Scala"'
Publikováno v:
Journal of Crystal Growth. 460:13-15
The evaporation from the silicon melt, during Czochralski process, is an important effect for Phosphorus and Antimony dopants. The evaporation rate γ was deduced from the measured axial profile of the resistivity converted into the concentration. Fo
Publikováno v:
Journal of Crystal Growth. 548:125820
This study investigates the impact of the arsenic and phosphorus concentration on the oxygen content in heavily doped silicon crystals. The resistivity and the oxygen measurements were made on 200 mm crystals grown with the Czochralski method. The ox
Publikováno v:
Solid State Phenomena. :591-596
This work proposes some improvements over the current state-of-the-art of carbon measurement in silicon by means of Fourier Transform Infrared Spectroscopy (FTIR) at low temperature (77 K), as described in the ASTM F1391-93 (2000) standard method.
Publikováno v:
Applied Physics A. 81:1187-1190
The calibration factors for the determination of boron and phosphorus concentration in single crystal silicon by low temperature Fourier transform infrared spectroscopy are examined, with the aim of comparing the behaviour of float-zone and Czochrals
Publikováno v:
Materials Science and Engineering: B. 102:228-232
A novel method for the quantitative measurement of nitrogen in Czochralski silicon by means of low temperature Fourier transform infrared spectroscopy (LT-FTIR) is presented, based on measurement in the far-infrared range. Its main advantage is the h
Autor:
V. N. Golovina, A. V. Batunina, Robert Falster, M. G. Milvidski, M. Porrini, Roberto Scala, Vladimir V. Voronkov, P. Collareta, L. V. Arapkina, M.G. Pretto, A.S. Guliaeva, G. I. Voronkova
Publikováno v:
Journal of Applied Physics. 89:4289-4293
Silicon crystals doped with nitrogen from the melt contain shallow thermal donors (STDs) detected both optically and electrically. Annealing samples at 600 and 650 °C results in a saturated STD concentration that depends on the nitrogen concentratio
Publikováno v:
Japanese Journal of Applied Physics. 55:031305
Indium is becoming one of the most important dopant species for silicon crystals used in photovoltaics. In this work we have investigated the behavior of indium in silicon crystals grown by the Czochralski pulling process. The experiments were perfor
Autor:
Vincenza Caputo, Vincenzo De Falco, Anna Ventriglia, Vincenzo Famiglietti, Erika Martinelli, Floriana Morgillo, Giulia Martini, Carminia Maria Della Corte, Davide Ciardiello, Luca Poliero, Ferdinando De Vita, Michele Orditura, Morena Fasano, Renato Franco, Michele Caraglia, Arianna Avitabile, Roberto Scalamogna, Beatrice Marchi, Fortunato Ciardiello, Teresa Troiani, Stefania Napolitano
Publikováno v:
Therapeutic Advances in Medical Oncology, Vol 14 (2022)
Background: Recently, new evidence of the next-generation sequencing (NGS) liquid biopsy utility in clinical practice has been developed. This assay is emerging as a new promising tool to use as a noninvasive biomarker for cancer mutation profiling.
Externí odkaz:
https://doaj.org/article/52c407b9e9474e63b0fa411f5e4ce61b
Autor:
Mauro, Ponsetto, Fabrizio, Ceresa, Antonio, Bergantino, Roberto, Scala, Eraldo, Personnettaz, Mauro, Obialero
Publikováno v:
Chirurgia italiana. 54(4)
A case of rectus sheath haematoma and essential thrombocytosis during anticoagulation treatment is described. The difficulties encountered in reaching a clinical, differential diagnosis between rectus sheath haematoma and other abdominal acute condit
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
The shallow dopants B, P, Al, As, and Sb in Si have been investigated by low-temperature Fourier-transform infrared absorption measurements. Experimental procedures are described to obtain quantitative results for the B and P concentration with impro