Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Roberto Bez"'
Autor:
Bruno Benevit, Carolina Silva da Trindade, Roberto Bezerra de Melo Junior, Daniel de Abreu Pereira Uhr, Julia Gallego Ziero Uhr
Publikováno v:
Forestry Economics Review, Vol 6, Iss 2, Pp 122-143 (2024)
Purpose – This study aims to evaluate the effects of the synergy between monitoring technologies and deforestation control policies promoted by the Action Plan for the Prevention and Control of Deforestation in the Legal Amazon (PPCDAm) during its
Externí odkaz:
https://doaj.org/article/dfadc19e664e4297b89fdd60ca54aac1
Autor:
Seung-Jun Bae, Roberto Bez, Paolo Cappelletti, Paolo Fantini, Akira Goda, Laurent Grenouillet, Mark Helm, Gertjan Hemink, Daniele Ielmini, Dae-Hyun Kim, Hye-Jung Kwon, Gabriel Molas, Ravi Nair, Giacomo Pedretti, Fabio Pellizzer, Agostino Pirovano, Andrea Redaelli, Julien Ryckaert, Shairfe Muhammad Salahuddin, Jon Slaughter, Pieter Weckx, Jung Yoon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c26e7737255f61426bc3e4594ecb688
https://doi.org/10.1016/b978-0-12-820758-1.09988-x
https://doi.org/10.1016/b978-0-12-820758-1.09988-x
Autor:
Enrico Prati, M. L. V. Tagliaferri, Sebastiano Strangio, Paolo Organtini, Roberto Bez, Giorgio Ferrari, Dario Tamascelli, Stefano Bigoni
Publikováno v:
Applied Physics Express
Applied Physics Express, 2020, 13 (12), pp.125001. ⟨10.35848/1882-0786/abc7cf⟩
Applied Physics Express, 2020, 13 (12), pp.125001. ⟨10.35848/1882-0786/abc7cf⟩
We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0daac986292ad14f2badd297daf43e46
https://hal.science/hal-04033319
https://hal.science/hal-04033319
Autor:
Giovanni Margutti, Giovanni Paternoster, Roberto Bez, Fabio Acerbi, Paolo Organtini, Alberto Gola
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 978:164410
The Silicon Photomultipliers (SiPM) have overcome the deficiencies of Photo-Multiplier Tubes (PMT) in terms of compactness, low voltage operation and insensitivity to magnetic fields. Starting from the needs for large volume manufacturing, for large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f94bd24126d6209e16e0b688abaa401
https://doi.org/10.1016/j.nima.2020.164410
https://doi.org/10.1016/j.nima.2020.164410
Publikováno v:
Solid-State Electronics. 102:2-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae45185dd895fe0b4a7fa8fabb14e5d
https://doi.org/10.1016/j.sse.2014.06.009
https://doi.org/10.1016/j.sse.2014.06.009
Autor:
Roberto Bez
Publikováno v:
In Search of the Next Memory ISBN: 9783319477220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04383f9d267162aff675ce5589d81f9e
https://doi.org/10.1007/978-3-319-47724-4_1
https://doi.org/10.1007/978-3-319-47724-4_1
Autor:
M. Borghi, Ferdinando Bedeschi, Marco Pasotti, G. De Sandre, L. Scotti, G. Mastracchio, Paolo Mattavelli, Roberto Gastaldi, A. Pirola, Paola Zuliani, Luca Bettini, L. Marmonier, Roberto Bez
Publikováno v:
IEEE Journal of Solid-State Circuits. 46:52-63
A 4 Mb embedded phase change memory macro has been developed in a 90 nm 6-ML CMOS technology. The storage element has been integrated using 3 additional masks with respect to process baseline. The cell selector is implemented by a standard LV nMOS de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b393cf68aed0a45f0d0cdd97c113aa0c
https://doi.org/10.1109/jssc.2010.2084491
https://doi.org/10.1109/jssc.2010.2084491
Publikováno v:
Materials Science Forum. 608:111-132
The development of the semiconductor industry through the CMOS technology has been possible thanks to the unique properties of the silicon and silicon dioxide material. Nevertheless the continuous scaling of the device dimension and the increase of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5e9e039396a081a6fe4b461aa7c313b
https://doi.org/10.4028/www.scientific.net/msf.608.111
https://doi.org/10.4028/www.scientific.net/msf.608.111
Autor:
Agostino Pirovano, R. Harrigan, Ferdinando Bedeschi, I. Tortorelli, R. Fackenthal, Andrea Redaelli, T. Marangon, Pietro Petruzza, G. Atwood, Davide Erbetta, Roberto Bez, A. Rigano, Fabio Pellizzer, M. Magistretti, Enrico Varesi
Publikováno v:
Solid-State Electronics. 52:1467-1472
A novel self-aligned μTrench-based cell architecture for phase change memory (PCM) process is presented. The low programming current and the good dimensional control of the sub-lithographic features achieved with the μTrench structure are combined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2139217bb142a5d9c110a2fefadbef97
https://doi.org/10.1016/j.sse.2008.04.031
https://doi.org/10.1016/j.sse.2008.04.031
Autor:
FERNANDO GONZALEZ CORRÊA, LUAN TOSHIO SERIKAWA, ROBERTO BEZERRA NICOLAU, LUIS FELIPE BRANDT FERRES, JOÃO CARLOS PEDRO FILHO, FERNANDO BALDY DOS REIS, LUIZ FERNANDO COCCO
Publikováno v:
Acta Ortopédica Brasileira, Vol 31, Iss 2 (2023)
ABSTRACT Objective: Evaluating clinical factors associated with mortality in older patients who underwent surgical correction of hip fractures. Methods: This observational and retrospective study analyzed the medical records of 67 patients (aged olde
Externí odkaz:
https://doaj.org/article/fec25c35f9be4d3c8278bf1ff807a932