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Autor:
Mirko Beyer, Tobias Gunther, Dan Koronel, Vijeet Gupta, Govinda Soni, Torsten Billasch, Christophe Soonekindt, Robert van Oostrum, Remo Kirsch
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
In this paper we demonstrate a sensitivity improvement on a Nitride Strip layer at the Shallow Trench Isolation (STI) process module and how this sensitivity was later used to improve yield monitoring. The improvement was enabled due to optics enhanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd679304c7f9595714a49c4caf9a62fc
https://doi.org/10.1109/asmc.2014.6847020
https://doi.org/10.1109/asmc.2014.6847020
