Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Robert Wortman"'
Autor:
Robert Wortman
Publikováno v:
2014 IEEE Conference on Technologies for Sustainability (SusTech).
As the power distribution grid adapts to distributed renewable generation, certain problems arise. Among these problems is that of high voltages during periods of excess production. Researchers at the California Smart Grid Center have analyzed the fe
Autor:
Rajeev Singh, Ali Shakouri, Timothy D. Sands, Robert Wortman, Mona Zebarjadi, Vijay Rawat, Zhixi Bian
Publikováno v:
Birck and NCN Publications
Zebarjadi, Mona; Bian, Zhixi; Singh, Rajeev; Shakouri, Ali; Wortman, Robert; Rawat, Vijay; et al.(2009). Thermoelectric Transport in a ZrN/ScN Superlattice. Journal of Electronic Materials, 38(7), pp 960-963. doi: 10.1007/s11664-008-0639-5. Retrieved from: http://www.escholarship.org/uc/item/9kq0z2t8
Zebarjadi, Mona; Bian, Zhixi; Singh, Rajeev; Shakouri, Ali; Wortman, Robert; Rawat, Vijay; et al.(2009). Thermoelectric Transport in a ZrN/ScN Superlattice. Journal of Electronic Materials, 38(7), pp 960-963. doi: 10.1007/s11664-008-0639-5. Retrieved from: http://www.escholarship.org/uc/item/9kq0z2t8
Metal/semiconductor superlattices have the potential for a high thermoelectric figure of merit. The thermopower of these structures can be enhanced by controlling the barrier height using high-energy electron filtering. In addition, phonon scattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0a603d39fb945c163df17225325679e
http://docs.lib.purdue.edu/nanopub/545
http://docs.lib.purdue.edu/nanopub/545
Publikováno v:
ASME 2007 2nd Energy Nanotechnology International Conference.
We have identified TiN/GaN and ZrN/ScN as two possible pure rocksalt structured metal/semiconductor combinations for fabrication of solid-state thermionic energy converters for high operational temperatures. The selection of the materials was constra
Autor:
Stephen F. LeBoeuf, Jody Fronheiser, Loucas Tsakalakos, Darryl Michael, Rolf Boone, Robert Wortman, Paul Russell Wilson, Joleyn Balch, David William White
Publikováno v:
MRS Proceedings. 958
The time resolved and DC photoconduction characteristics of Si nanowire devices are described. Si nanowires with diameters ranging from 20-100 nm were grown using the vapor-liquid-solid (VLS) growth mechanism under standard conditions and devices wer