Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Robert Wildfeuer"'
Autor:
Gilad Ben-Nahumb, Stefano Ventola, Franck Jauzion-Graverolle, Robert Wildfeuer, Stefan Fuchs, Uwe Kramer, Ovadya Menadeva, David Jackisch
Publikováno v:
SPIE Proceedings.
As design rules shrink, there is an increase in the complexity. OPC/RET have been facilitating unprecedented yield at k 1 factors, they increase the mask complexity and production cost, and can introduce yield-detracting errors. Currently OPC modelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7754f2aa9c59e3728a5323780ab571e
https://doi.org/10.1117/12.774114
https://doi.org/10.1117/12.774114
Autor:
Martin Niehoff, M. C. Keck, C. Bodendorf, Robert Wildfeuer, S. Zumpe, R. Schlief, T. Schmidtling
Publikováno v:
SPIE Proceedings.
Modular OPC modeling, describing mask, optics, resist and etch processes separately is an approach to keep efforts for OPC manageable. By exchanging single modules of a modular OPC model, a fast response to process changes during process development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d7edbbf9f8fc858dde3d0387a573661
https://doi.org/10.1117/12.716295
https://doi.org/10.1117/12.716295
Autor:
Woong Jae Chung, Sebastian Schmidt, Robert Wildfeuer, ChinTeong Lim, Martin Niehoff, Vlad Temchenko, Uta Mierau, Dave Wallis
Publikováno v:
SPIE Proceedings.
Optical & process model are used in conjunction with Mentors Calibre OPC tool to predict the behavior of a lithography process. Resist models rely exclusively on empirical measurement data, while optical models are calibrated based on the users knowl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4e75dbae29ef7e16aae601606a518be
https://doi.org/10.1117/12.655801
https://doi.org/10.1117/12.655801
Autor:
Christian K. Kalus, Robert Wildfeuer
Publikováno v:
SPIE Proceedings.
Optical lithography simulation plays a decisive role in the development of technology for the manufacturing process of semiconductor devices. Its role in reticle inspection has only recently gained more attention. Filters determining which defects ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd52943f700762fa3bca79c5425cdeba
https://doi.org/10.1117/12.479362
https://doi.org/10.1117/12.479362
Publikováno v:
SPIE Proceedings.
The applicability and accuracy of newly developed analytical models for resist process effects are investigated. These models combine a stationary level set formulation with a lumped parameter model. They allow to propagate the 3D photoresist profile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c9198f6173dbf1d54d46494ec2066f1
https://doi.org/10.1117/12.474506
https://doi.org/10.1117/12.474506
Publikováno v:
SPIE Proceedings.
The use of experimental development rate information is used to demonstrate various deficiencies in the dissolution rate equations commonly employed in commercial lithography simulation programs. An improved version of the Notch dissolution rate equa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23862cf28b1d3c292dee807b1b329edf
https://doi.org/10.1117/12.436815
https://doi.org/10.1117/12.436815