Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Robert W. Herrick"'
Autor:
Matteo Buffolo, Enrico Zanoni, Gaudenzio Meneghesso, Lorenzo Rovere, Daehwan Jung, Carlo De Santi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-8
This paper investigates the impact of dislocation density and active layer structure on the degradation mechanisms of 1.3 $\mu \text{m}$ InAs Quantum Dot (QD) lasers for silicon photonics. We analyzed the optical behavior of two sets of samples, havi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4effdababa10fbb859d0d37d341c851
https://doi.org/10.1109/jqe.2020.3033041
https://doi.org/10.1109/jqe.2020.3033041
Autor:
Daehwan Jung, Lorenzo Rovere, Gaudenzio Meneghesso, Fabio Samparisi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick, Enrico Zanoni, Matteo Buffolo, Carlo De Santi
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 26:1-8
This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b281a03fcf2777db543f31061df2938
https://doi.org/10.1109/jstqe.2019.2939519
https://doi.org/10.1109/jstqe.2019.2939519
Autor:
Gaudenzio Meneghesso, Matteo Buffolo, Justin Norman, Robert W. Herrick, Carlo De Santi, Enrico Zanoni, Federico Lain, Matteo Meneghini, M. Zenari, John E. Bowers
This paper investigates the origin of the diffusion process responsible for the optical degradation of InAs quantum dot (QD) laser diodes epitaxially grown on silicon. By means of a series of constant-current stress experiments carried out at differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1671bbcf11bd1e9a519f5552df1b4de4
http://hdl.handle.net/11577/3412513
http://hdl.handle.net/11577/3412513
Autor:
Matteo Buffolo, Michele Zenari, Carlo De Santi, Justin Norman, John E. Bowers, Robert W. Herrick, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eb332838f15b8ab402d4812a5694152
http://hdl.handle.net/11577/3455311
http://hdl.handle.net/11577/3455311
Autor:
Chen Shang, Daehwan Jung, Michael Kennedy, Arthur C. Gossard, Robert W. Herrick, Justin Norman, John E. Bowers, Zeyu Zhang, Mario Dumont
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-11
$p$ -type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3e7a2216a127cbc26cb974182273e7
https://doi.org/10.1109/jqe.2019.2941579
https://doi.org/10.1109/jqe.2019.2941579
Degradation Behaviors in InAs Quantum Dot Lasers on Silicon using Misfit Dislocation Trapping Layers
Autor:
Robert W. Herrick, Kunal Mukherjee, Jennifer Selvidge, John E. Bowers, Chen Shang, Eamonn T. Hughes
Publikováno v:
2021 IEEE Photonics Conference (IPC).
InAs quantum dot lasers on silicon using misfit dislocation trapping layers show 400-fold improvement in lifetime at 80°C (failure criterion: 50% initial peak power). Trapped misfit segments show no evidence of recombination enhanced dislocation cli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88101ea1e03032715458020c8d25914
https://doi.org/10.1109/ipc48725.2021.9593088
https://doi.org/10.1109/ipc48725.2021.9593088
Autor:
Robert W. Herrick, Kunal Mukherjee, Eamonn T. Hughes, Weng W. Chow, Yating Wan, Jianan Duan, John E. Bowers, Frédéric Grillot, Jennifer Selvidge, Chen Shang
Publikováno v:
ACS photonics
ACS photonics, American Chemical Society, 2021, 8 (9), pp.2555-2566. ⟨10.1021/acsphotonics.1c00707⟩
ACS photonics, American Chemical Society, 2021, 8 (9), pp.2555-2566. ⟨10.1021/acsphotonics.1c00707⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ca611527f9f8d231563d2a79d69b97f
https://hal.telecom-paris.fr/hal-03363296
https://hal.telecom-paris.fr/hal-03363296
Autor:
Robert W. Herrick, Zeyu Zhang, Weng W. Chow, Justin Norman, Daehwan Jung, John E. Bowers, Songtao Liu, Yating Wan, Arthur C. Gossard, Chen Shang
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-11
Laser gain regions using quantum dots have numerous improvements over quantum wells for photonic integration. Their atom-like density of states gives them unique gain properties that can be finely tuned by changing growth conditions. The gain bandwid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d2632bf925995fc77e7647b12cc2071
https://doi.org/10.1109/jqe.2019.2901508
https://doi.org/10.1109/jqe.2019.2901508
Autor:
John E. Bowers, A. Caria, C. De Santi, Qiang Guo, Robert W. Herrick, Daehwan Jung, Alan Y. Liu, G. Meneghesso, M. Meneghini, Kunal Mukherjee, Justin C. Norman, F. Piva, Jennifer Selvidge, Shigetaka Tomiya, Osamu Ueda, E. Zanoni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::393426b981b3441e48c489222c1bc05c
https://doi.org/10.1016/b978-0-12-819254-2.00015-1
https://doi.org/10.1016/b978-0-12-819254-2.00015-1
Autor:
Robert W. Herrick, Jennifer Selvidge, Daehwan Jung, John E. Bowers, Kunal Mukherjee, Justin Norman, Alan Y. Liu
Scalable manufacturing of high-performance lasers and photonic integrated circuits are critical to meeting growing demand for bandwidth in data centers, high-performance computers, and to support 5G infrastructure. All these markets require the high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa461a275c57529ed1cff41102ed1745
https://doi.org/10.1016/b978-0-12-819254-2.00002-3
https://doi.org/10.1016/b978-0-12-819254-2.00002-3