Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Robert W. Gedridge"'
Autor:
Richard D. Ernst, Bernd Weber, Frank H. Köhler, Robert Tomaszewski, Wimonrat Trakarnpruk, Robert W. Gedridge, Rüdiger Mölle, Atta M. Arif, Rehan Basta, Werner Strauss
Publikováno v:
Organometallics. 22:1923-1930
The syntheses and characterizations of the M[1,5-(Me3Si)2C5H5]2 complexes for M = V and Cr have been achieved, as well as that for the unsymmetric Cr[1-Me3Si-3-MeC5H5]2. Structural data for the vanadium complex reveal substantial steric crowding, in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33b368c58d52f940cea2e2e9b76c4f74
https://doi.org/10.1021/om020720+
https://doi.org/10.1021/om020720+
Autor:
Robert W. Gedridge, Laurence P. Sadwick, Thomas J. Groshens, H.H. Ryu, Gerald B. Stringfellow
Publikováno v:
Journal of Crystal Growth. 172:1-4
For the first time, single crystalline layers of indium phosphide (InP) have been grown by the chemical beam epitaxy (CBE) technique without thermally precracking the phosphorus (P) source. This was accomplished using a novel P precursor, tertiarybut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99bcc739d0e656a70428a0599ee5c652
https://doi.org/10.1016/s0022-0248(96)00422-8
https://doi.org/10.1016/s0022-0248(96)00422-8
Publikováno v:
Journal of Organometallic Chemistry. 501:95-100
Reactions of titanium(II) or zirconium(IV) chlorides with two or four equivalents of K[1,5-(Me 3 Si) 2 C 5 H 5 ], respectively, lead to the diamagnetic 14-electron M[1,5-(Me 3 Si) 2 C 5 H 5 ] 2 complexes. Both have been characterized analytically, sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e882ab022c4109bf5041fe3812f24568
https://doi.org/10.1016/0022-328x(95)05624-x
https://doi.org/10.1016/0022-328x(95)05624-x
Publikováno v:
Magnetic Resonance in Chemistry. 33:441-448
125Te, 13C and 1H NMR studies on a series of symmetric diorganotellurium(II) [R2 Te, where R = Me, Et, n-Bu, CH2SiMe3, allyl, vinyl, CCMe, CCEt, CC(n-Pr), CC(t-Bu), CC(SiMe3) and CCPh], unsymmetric diorganotellurium(II) (RTeR′) (where R = allyl, R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf65991349e19ead2e6e0c1f141ba85c
https://doi.org/10.1002/mrc.1260330606
https://doi.org/10.1002/mrc.1260330606
Publikováno v:
Journal of Crystal Growth. 151:1-8
The organometallic vapor phase epitaxial (OMVPE) growth of GaSb using a new Sb source, trisdimethylaminoantimony (TDMASb) is described for a wide temperature range between 450 and 600° C. Good surface morphologies were obtained at low VIII ratios du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4203ceae7c73ae03fa59707acd94eb
https://doi.org/10.1016/0022-0248(94)01024-2
https://doi.org/10.1016/0022-0248(94)01024-2
Publikováno v:
Journal of Crystal Growth. 143:15-21
Many new Sb sources for organometallic vapor phase epitaxial (OMVPE) growth of low energy band gap III/V antimonides have been developed and tested. However, most of the precursors including trimethylantimony (TMSb), triisopropylantimony (TIPSb), dii
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4bfef98d1dc4df60dbe83bf81276455
https://doi.org/10.1016/0022-0248(94)90362-x
https://doi.org/10.1016/0022-0248(94)90362-x
Publikováno v:
Journal of Crystal Growth. 132:371-376
Low growth temperatures are necessary for the organometallic vapor phase epitaxial growth of many III/V semiconductors, particularly the low energy band gap antimonides. This has caused difficulties with conventional, established precursors because o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7915c3cc08cb1904bbdaaf519661f63
https://doi.org/10.1016/0022-0248(93)90061-z
https://doi.org/10.1016/0022-0248(93)90061-z
Publikováno v:
Journal of Organometallic Chemistry. 456:31-34
A series of organoindium amido compounds have been prepared for use as dopants in the organometallic vapor phase epitaxy (OMVPE) of II–VI semiconductor materials. Thus, reaction of tBu2InCl or iPr2InCl with the appropriate lithium or sodium dialkyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b71ff45b74299e9608921a7625166ea0
https://doi.org/10.1016/0022-328x(93)83312-j
https://doi.org/10.1016/0022-328x(93)83312-j
Publikováno v:
Chemistry of Materials. 5:979-982
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f307ed98b16a141b42f5feb0d4dedb
https://doi.org/10.1021/cm00031a017
https://doi.org/10.1021/cm00031a017
Publikováno v:
Organometallics. 12:1553-1558
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8749a8b3874f41d9346f85cb44b09a6
https://doi.org/10.1021/om00029a013
https://doi.org/10.1021/om00029a013