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of 213
pro vyhledávání: '"Robert W. Birkmire"'
Autor:
Robert J. Lovelett, Xueqi Pang, Tyler M. Roberts, William N. Shafarman, Robert W. Birkmire, Babatunde A. Ogunnaike
Publikováno v:
AIP Advances, Vol 6, Iss 4, Pp 045015-045015-17 (2016)
Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere
Externí odkaz:
https://doaj.org/article/165da513be4d47cdbb5fd8bf6ae1666a
Publikováno v:
Progress in Photovoltaics: Research and Applications. 28:863-872
Publikováno v:
Langmuir. 33:14580-14585
A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H2S) is demonstrated in this paper. A high-level passivation quality with an effective minority carrier lifetime (τeff) of >2000 μs corresponding to a
Autor:
Nuha Ahmed, Kevin D. Dobson, Steven Hegedus, Feng Jiao, Robert W. Birkmire, Wesley Luc, Gowri Sriramagiri
Publikováno v:
MRS Advances. 2:3359-3364
Growing interest in the use of CO2 as a feedstock for fuel generation has led to increased interest in solar CO2 electrolysis for renewable fuel generation which has a variety of applications ranging from providing renewable sources for energy-dense
Autor:
Robert J. Lovelett, Robert W. Birkmire, Gregory M. Hanket, Babatunde A. Ogunnaike, William N. Shafarman
Publikováno v:
Journal of Process Control. 46:24-33
Copper indium gallium diselenide, Cu(InGa)Se 2 (CIGS) solar cells have achieved efficiencies of 22.3% at the cell level and 17.5% at the module level. CIGS-based modules are also in the early stages of commercialization, with >1 GW annual production
Publikováno v:
Journal of Applied Physics. 128:143102
Admittance spectroscopy has become a commonly used device-level technique to probe the defect structure of kesterite materials. While this technique holds promise, phenomena such as current barriers and metastabilities cause difficulty in the interpr
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Excellent surface passivation of n-type Si is achieved by surface reaction in H 2 S at a temperature of 450-650°C. X-ray photoelectron spectroscopy (XPS) analysis of the H 2 S reacted Si surface shows that effective minority carrier lifetime (t eff
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Solar cells fabricated on single-crystalline Cu 2 ZnSnSe 4 exhibiting V OC ’s as high as 428 mV are presented. Two devices with varied Cu and Zn content are characterized to determine the factors contributing to the improved V OC in the more Cu-dep
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 33(51)
A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H
Publikováno v:
IEEE Journal of Photovoltaics. 5:390-394
CZTSe single crystals of different compositions were fabricated by solid-state reaction of elements in a sealed ampoule below the melt temperature. About 2-5-mm crystals were achieved without a flux agent, which, when present, can potentially affect