Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Robert V. Wright"'
Autor:
David A. Darbyshire, Mihai Rotaru, Suan Hui Pu, Paul B. Kirby, Robert V. Wright, Andrew S. Holmes, Eric M. Yeatman
Publikováno v:
IEEE Electron Device Letters. 37:1340-1343
An RF MEMS zipping analog varactor with a high-permittivity bismuth zinc niobate dielectric has been fabricated and characterized. The varactor can be continuously tuned from 10 to 280 fF, with a very large tuning range of 2700%. By use of gold elect
Publikováno v:
Advanced Materials Research. 590:216-221
Monodispersed Ag nanoparticles with sizes down to 10 nm were synthesised in an aqueous medium. These nanoparticles were then successfully dispersesd up to 45 wt% in aqueous medium with the aid of a copolymer, Pluronic F127. SiO2 nanoparticles were ad
Publikováno v:
Materials Chemistry and Physics. 132:788-795
In this paper, the formulation of a high Ag loading (45 wt%) aqueous ink and its subsequent printing on three different ceramic substrates were reported. Monodispersed Ag nanoparticles with a size down to 10 nm were successfully synthesized in aqueou
Autor:
Zlatoljub D Milosavljevic, Michel Despont, Paul B. Kirby, Richard Stutz, Tauno Vähä-Heikkilä, P. Rantakari, Roland Guerre, Debabrata Bhattacharyya, Ute Drechsler, Robert V. Wright
Publikováno v:
Guerre, R, Drechsler, U, Bhattacharyya, D, Rantakari, P, Stutz, R, Wright, R V, Milosavljevic, Z D, Vähä-Heikkilä, T, Kirby, P B & Despont, M 2010, ' Wafer-level transfer technologies for PZT-based RF MEMS switches ', Journal of Microelectromechanical Systems, vol. 19, no. 3, pp. 548-560 . https://doi.org/10.1109/JMEMS.2010.2047005
We report on wafer-level transfer technologies to integrate PZT-based radio frequency (RF) microelectromechanical-systems switches on CMOS. Such heterogeneous integration can overcome the incompatibility of PZT material with back-end-of-the-line (BEO
Autor:
F. F. C. Duval, Robert V. Wright, H.C. Chung, Paul B. Kirby, Zhaorong Huang, Glenn J. T. Leighton, Roger W. Whatmore
Publikováno v:
Sensors and Actuators A: Physical. 135:660-665
Knowledge of the electro-active properties of piezoelectric materials is essential for the modeling and design of novel MEMS devices employing the piezoelectric effect. Cantilevers of piezoelectric thin film on Si were fabricated by using sol–gel a
Autor:
Robert A. Dorey, Zhaorong Huang, Paul B. Kirby, Robert V. Wright, Qi Zhang, F. F. C. Duval, Glenn J. T. Leighton, Roger W. Whatmore, S. Corkovic
Publikováno v:
Journal of Electroceramics. 17:549-556
Piezoelectric films can be used in micro-electro-mechanical system (MEMS) devices because the piezoelectric effect can provide high forces with relatively low energy losses. The energy output by a piezoelectric film per unit area is proportional to t
Autor:
Anil Patel, Peter Enoksson, Ralph Nonninger, Paul Netter, C.H.J. Fox, Robert V. Wright, Roger Diels, Michel Pealat
Publikováno v:
Scopus-Elsevier
This paper reports the results of a 3 year Brite-Euram (III) programme aimed at extending the functionality of micromechanical and optical devices utilising both thin and thick film PZT technologies: a oscillatory gyroscope with a resolution of 0.2°
Autor:
Alan Hydes, Andrew Grantham, Raj Sethi, Tracey Bland, Paul B. Kirby, Caroline Vizard, Anil Patel, Robert V. Wright, Martin Wedd, Melody Branfield, Paul Dennis, Pam Whitaker
Publikováno v:
Integrated Ferroelectrics. 17:205-212
The desired electrical properties of decoupling capacitors for use in an existing MCM-D process have been defined. Two types of dielectric have been investigated, sol-gel deposited P(L)ZT and dual ion beam sputtered (DIBS) BST. Their electrical prope
Thin film bulk acoustic resonators (FBARs) have been directly integrated on liquid crystal polymer (LCP) substrates for application to the field of flexible electronics. Particular developments required were chemo-mechanical polishing for LCP roughne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbdcb53b774785606325235ca251b9e8
http://dspace.lib.cranfield.ac.uk/handle/1826/8518
http://dspace.lib.cranfield.ac.uk/handle/1826/8518
Autor:
Robert V. Wright, Eric M. Yeatman, R. Hergert, Andrew S. Holmes, A. Bansal, Paul B. Kirby, Guangbin Dou, Debabrata Bhattacharyya
A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate. The thin film ferroelectric material is deposited on a fused silica growth substrate with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b2e8e71895456322f0aea1240432da1
http://dspace.lib.cranfield.ac.uk/handle/1826/5231
http://dspace.lib.cranfield.ac.uk/handle/1826/5231