Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Robert Tsu"'
Autor:
Akitoshi Nishimura, Ken Numata, Scott R. Summerfelt, Shintaro Aoyama, Katsuhiro Aoki, Yukio Fukuda, Robert Tsu
Publikováno v:
Integrated Ferroelectrics. 11:121-127
Recent reports on the current-voltage (I-V) characteristics of SrTiO3 and (Ba,Sr)TiO3 thin film capacitors with Pt electrode suggest that their leakage properties are controlled by Schottky emission from cathode. However, their dynamic permittivities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f16cb8a76069f6429836b0047e5facc
https://doi.org/10.1080/10584589508013584
https://doi.org/10.1080/10584589508013584
Publikováno v:
Surface Science. 330:20-26
Electronic structures for the hydrogen-passivated Si(001)2 × 1 surface are calculated using a first-principles method with planar basis functions constructed from two-dimensional (2D) plane waves and one-dimensional (1D) Gaussian functions. Hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::940ca731045928797f3d7fcccd2437b9
https://doi.org/10.1016/0039-6028(95)00238-3
https://doi.org/10.1016/0039-6028(95)00238-3
Publikováno v:
Thin Solid Films. 225:191-195
Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), and reflection high-energy electron diffraction (RHEED) were used to investigate the adsorption, surface dissociation, and thermal desorption of Si 2 H 6 on Ge(001)2 × 1. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6b757b81fc756456055f93ac39ba95
https://doi.org/10.1016/0040-6090(93)90154-h
https://doi.org/10.1016/0040-6090(93)90154-h
Publikováno v:
Surface Science. 280:265-276
Adsorption and thermally-induced dissociation of disilane (Si2H6) on clean Ge(001)2 × 1 surfaces have been investigated using a combination of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), reflection high-energy electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1868a293bd311489e0e9b5d6390bcfda
https://doi.org/10.1016/0039-6028(93)90680-i
https://doi.org/10.1016/0039-6028(93)90680-i
Publikováno v:
Physical Review B. 45:3494-3498
Scanning tunneling microscopy has been employed to study the adsorption of disilane (${\mathrm{Si}}_{2}$${\mathrm{H}}_{6}$) and pyrolytic growth on Si(100)-(2\ifmmode\times\else\texttimes\fi{}1) at various temperatures. Room-temperature exposures res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2305f920b4677f65ab00c049bd50686
https://doi.org/10.1103/physrevb.45.3494
https://doi.org/10.1103/physrevb.45.3494
Publikováno v:
Applied Physics Letters. 66:2975-2977
Current flow through Pt/(Ba0.7Sr0.3)TiO3/Pt stack consists of both polarization current and electronic leakage current, which were separated by monitoring the discharging current when applied voltage was turned off. Electronic current comes from elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c2f17ff1e4cf83f8566d464c7283af
https://doi.org/10.1063/1.114248
https://doi.org/10.1063/1.114248
Publikováno v:
2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
Leakage and breakdown characteristics of low-k dielectrics are becoming increasingly important reliability issues for interconnects as they are scaled to 0.18 um and below. Several of the low-k dielectrics, integrated into a dual-damascene Cu process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ae7a6a18f1e3bdefca02d52f1e3ba92
https://doi.org/10.1109/relphy.2000.843938
https://doi.org/10.1109/relphy.2000.843938
Autor:
Bruce E. Gnade, Yujing Wu, Scott R. Summerfelt, Robert Tsu, Elizabeth G. Jacobs, Russell F. Pinizzotto, Hung Yu Liu
Publikováno v:
MRS Proceedings. 361
The kinetics of BST thin film grain nucleation and growth caused by rapid thermal annealing have been investigated. A series of Ba0.67Sr0.33Tii0.5O3 films were deposited on Pt electrodes using a metal-organic decomposition process. The effects of ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df749d28294067edab4d6fa108f0df18
https://doi.org/10.1557/proc-361-269
https://doi.org/10.1557/proc-361-269
Publikováno v:
MRS Proceedings. 361
Thin film barium strontium titanate, Ba1−xSrxTiO3 (BST), has been deposited on Pt bottom electrodes using metal-organic decomposition (MOD). Optimization of BST electric properties, including capacitance density and leakage current, can be achieved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe3ede58a9c45fe1b2faefda2dd45a8
https://doi.org/10.1557/proc-361-275
https://doi.org/10.1557/proc-361-275
Publikováno v:
Physical review. B, Condensed matter. 48(16)
H-terminated Si(100) surfaces were formed by saturation exposure of Si(100) to disilane at room temperature. Annealing these surfaces to progressively higher temperatures resulted in hydrogen desorption. This process, of basic importance to the growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50fb5e14b9220e7fd4c644c560370350
https://pubmed.ncbi.nlm.nih.gov/10007524
https://pubmed.ncbi.nlm.nih.gov/10007524