Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Robert Trzcinski"'
Autor:
Jean-Olivier Plouchart, Choongyeun Cho, Sangyeun Cho, Robert Trzcinski, Daihyun Lim, Daeik Daniel Kim, Jonghae Kim
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:55-62
Process-induced variability has become a predominant limiter of performance and yield of IC products especially in a deep submicron technology. However, it is difficult to accurately model systematic process variability due to the complicated and int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e687ac4166160c725037b39118c60c29
https://doi.org/10.1109/tsm.2007.913192
https://doi.org/10.1109/tsm.2007.913192
Autor:
S. Chaloux, S. Sweeney, Mukesh Khare, Lawrence F. Wagner, Jean-Olivier Plouchart, Jonghae Kim, Shreesh Narasimha, Noah Zamdmer, Robert Trzcinski
Publikováno v:
IEEE Transactions on Electron Devices. 52:1370-1375
A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz F/sub t/, 208-GHz F/sub max/, 1.45-mS//spl mu/m gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF//spl mu/m/sup 2/, varactor w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d521b7ea2434939c7e2e173595d8a173
https://doi.org/10.1109/ted.2005.850638
https://doi.org/10.1109/ted.2005.850638
Autor:
Manoj Kumar, Choongyeun Cho, Daeik Daniel Kim, Robert Trzcinski, Jonghae Kim, Jean-Olivier Plouchart, C. Norris
Publikováno v:
IEEE Electron Device Letters. 28:616-618
This letter presents symmetric vertical parallel plate (VPP) capacitors in 65-nm silicon-on-insulator CMOS technology. Three VPP capacitors with different metal layer options are examined with respect to effective capacitance density and -factor. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f49cd63d9de6189e982a3e754e8cbc9
https://doi.org/10.1109/led.2007.899464
https://doi.org/10.1109/led.2007.899464
Autor:
Sungjae Lee, Choongyeun Cho, C. Norris, Manoj Kumar, Gregory G. Freeman, Daeik Daniel Kim, Robert Trzcinski, Jae-Sung Rieh, Jonghae Kim, Jean-Olivier Plouchart, David C. Ahlgren
Publikováno v:
IEEE Electron Device Letters. 28:520-522
This letter reports the statistical analysis of circuit-level FET high-speed performance in 65-nm silicon-on-insulator CMOS technology. Practical performance metrics are derived from full 300-mm wafer measurements. The proposed circuit-level layout w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f3392f3fad795368d96a7dd637251e0
https://doi.org/10.1109/led.2007.897448
https://doi.org/10.1109/led.2007.897448
Autor:
Daniel Patrick Connors, James J. Wynne, Jerome M. Felsenstein, Donna S. Zupanski-Nielsen, Robert Trzcinski
Publikováno v:
SPIE Proceedings.
Burn eschar and other necrotic areas of the skin and soft tissue are anhydrous compared to the underlying viable tissue. A 193 nm ArF excimer laser, emitting electromagnetic radiation at 6.4 eV at fluence exceeding the ablation threshold, will debrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec2e28b2a4445984faaf0d95546388d
https://doi.org/10.1117/12.876957
https://doi.org/10.1117/12.876957
Autor:
James J. Wynne, Donna S. Zupanski-Nielsen, Jerome M. Felsenstein, Robert Trzcinski, Daniel Patrick Connors
Publikováno v:
Medical Laser Applications and Laser-Tissue Interactions V.
Pulsed ArF excimer laser radiation at 6.4 eV, at fluence exceeding the ablation threshold, will debride burn eschar and other dry necrotic erosions of the skin. Debridement will cease when sufficiently moist viable tissue is exposed, due to absorptio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::232edabfce2287a841125676d5459f67
https://doi.org/10.1364/ecbo.2011.809213
https://doi.org/10.1364/ecbo.2011.809213
Autor:
Bing Dang, Paul S. Andry, Aparna Prabhakar, Robert J. Polastre, Cornelia K. Tsang, Joana Maria, Robert Trzcinski, John U. Knickerbocker
Publikováno v:
2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).
This paper reports a thin wafer handling technology that is compatible to CMOS processing conditions to enable 3D integration and assembly with high throughput at low cost. Using pulsed ultraviolet (UV) radiation from excimer lasers, device wafers as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac0a8278ac0907f9bd47bd6600200ea
https://doi.org/10.1109/ectc.2010.5490820
https://doi.org/10.1109/ectc.2010.5490820
Publikováno v:
2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
An RF and mm-wave platform developed in 65 nm SOI CMOS technology is presented. The SOI FET performance in a wired cell is measured up to fT=300 GHz and 200 GHz for NFET and PFET. Ring oscillator records 3.6 psec minimum inverter stage delay. Back-en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a4d66413ae019d9d1b2354fbdb546d
https://doi.org/10.1109/smic.2008.18
https://doi.org/10.1109/smic.2008.18
Autor:
Robert Trzcinski, V. Karam, Jonghae Kim, Jean-Olivier Plouchart, Choongyeun Cho, Daiek Kim, Calvin Plett
Publikováno v:
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
A 2:1 static frequency divider using a bandpass load was fabricated in a digital 90 nm SOI CMOS technology. The divider exhibits a maximum operating frequency of 81 GHz at 1.2 V, and a core power of 15.6 mW. The divider can operate down to 0.5 V at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46dc7d101f4bf35d4aa90807adabd25b
https://doi.org/10.1109/csics07.2007.28
https://doi.org/10.1109/csics07.2007.28
Autor:
Sangyeun Cho, Jean-Olivier Plouchart, Robert Trzcinski, Daihyun Lim, Daeik Daniel Kim, Choongyeun Cho, Jonghae Kim
Publikováno v:
ISQED
This paper presents a simple yet effective method to analyze process variations using statistics on manufacturing in-line data without assuming any explicit underlying model for process variations. Our method is based on a variant of principal compon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b188480e3d8efc346b3851a8dbdee2cc
https://doi.org/10.1109/isqed.2007.8
https://doi.org/10.1109/isqed.2007.8