Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Robert S. Okojie"'
Autor:
Robert S. Okojie, Leah M. Nakley, Gary W. Hunter, Dorothy Lukco, Kyle G. Phillips, Philip G. Neudeck, David J. Spry
Publikováno v:
Journal of Spacecraft and Rockets. 57:1118-1128
Materials used in the fabrication of landers for Venus exploration need to be carefully selected to assure functional durability throughout anticipated prolonged future mission durations in the har...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51b0a541fdbb50fd4e52d93f231323e5
https://doi.org/10.2514/1.a34617
https://doi.org/10.2514/1.a34617
Autor:
P. G. Neudeck, David J. Spry, Gustavo C. C. Costa, Amir Avishai, Gary W. Hunter, Robert S. Okojie, Dorothy Lukco, Ralph P. Harvey, Leah M. Nakley
Publikováno v:
Earth and Space Science. 5:270-284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f223a6402b17d000bb45f5ce115305b0
https://doi.org/10.1029/2017ea000355
https://doi.org/10.1029/2017ea000355
Autor:
Robert S. Okojie, Dorothy Lukco
Publikováno v:
Materials Science Forum. 924:381-384
We report the initial results of using co-sputtered Pt:Ti 80:20 at. % composition ratio metallization as a diffusion barrier against gold (Au) and oxygen (O), as an interconnect layer, as well as forming simultaneous ohmic contacts to n-and p-type 4H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2344bf848f516e125c17fec3d40bcd4
https://doi.org/10.4028/www.scientific.net/msf.924.381
https://doi.org/10.4028/www.scientific.net/msf.924.381
Publikováno v:
2018 Joint Propulsion Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd16dee066e773b3f8dae66bb1b94da4
https://doi.org/10.2514/6.2018-4820
https://doi.org/10.2514/6.2018-4820
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000028-000032
We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 °C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 °C, eventually achieving near or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f279c4e619ae8ce9735a6889d65e9a19
https://doi.org/10.4071/hitec-ta21
https://doi.org/10.4071/hitec-ta21
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:000047-000052
Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 °C during laboratory characterization, and subsequently evaluated in a combustor rig op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05f51861f0bcf2b5f8ec589a6bea98a
https://doi.org/10.4071/hitec-ta25
https://doi.org/10.4071/hitec-ta25
Publikováno v:
IEEE Electron Device Letters. 36:174-176
Uncooled MEMS-based 4H-SiC Wheatstone bridge configured piezoresistive pressure sensors were demonstrated from 23 °C to 800 °C. The full-scale output (FSO) voltage exhibited gradual decrease with increasing temperature from 23 °C to 400 °C, then
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1428f1f7e1d0804782ad6b1530a023fc
https://doi.org/10.1109/led.2014.2379262
https://doi.org/10.1109/led.2014.2379262
Autor:
Carl W. Chang, Robert S. Okojie
Publikováno v:
Sensors and Actuators A: Physical. 188:396-400
We report on the development of nickel-based micro diaphragms for fuel flow modulation during jet engine combustion. The micro diaphragms were fabricated and assembled, after which they were tested in a prototype mesoscale fuel injector. A combinatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adc4211b22201452792426aa86cc648e
https://doi.org/10.1016/j.sna.2012.02.009
https://doi.org/10.1016/j.sna.2012.02.009
Publikováno v:
Materials Science Forum. :841-844
We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775ade66b44cdc43abacde461440ebae
https://doi.org/10.4028/www.scientific.net/msf.717-720.841
https://doi.org/10.4028/www.scientific.net/msf.717-720.841
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000099-000103
We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 °C. The previously observed maximum drift of ± 10 mV of the reference offset voltage at 600 °C was redu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed63b0ad40292f3b41932e5d90e400da
https://doi.org/10.4071/hitec-2012-tp16
https://doi.org/10.4071/hitec-2012-tp16