Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Robert R. Ilic"'
Autor:
Robert R. Ilic, Krishna Coimbatore Balram, Daron A. Westly, Marcelo I. Davanco, Karen E. Grutter, Qing Li, Thomas Michels, Christopher H. Ray, Liya Yu, Neal A. Bertrand, Samuel M. Stavis, Vladimir A. Aksyuk, James Alexander A. Liddle, Brian A. Bryce, Nicolae Lobontiu, Yuxiang Liu, Meredith Metzler, Gerald Lopez, David Czaplewski, Leonidas Ocola, Pavel Neuzil, Vojtech Svatos, Slava Krylov, Christopher B. Wallin, Ian J. Gilbert, Kristen A. Dill, Richard J. Kasica, Kartik A. Srinivasan, Gregory Simelgor, Juraj Topolancik
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6f791326e285fe0a44b8bce511827c
https://doi.org/10.6028/nist.hb.160
https://doi.org/10.6028/nist.hb.160
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA., Perez-Morelo DJ; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA., Ramer G; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.; Institute of Chemical Technologies and Analytics, TU Wien, Getreidemarkt 9, 1060 Vienna, Austria., Pavlidis G; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Schwartz JJ; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Yu L; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Ilic R; Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Centrone A; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA., Aksyuk VA; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Publikováno v:
Science advances [Sci Adv] 2023 Mar 17; Vol. 9 (11), pp. eadf7595. Date of Electronic Publication: 2023 Mar 15.
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States., Ramer G; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Institute of Chemical Technologies and Analytics, TU Wien, Getreidemarkt 9, 1060 Vienna, Austria., Perez-Morelo DJ; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States., Pavlidis G; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.; Department of Mechanical Engineering, University of Connecticut, Storrs, Connecticut 06269, United States., Schwartz JJ; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States.; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Yu L; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Ilic R; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Aksyuk VA; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Centrone A; Nanoscale Devices Characterization Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States.
Publikováno v:
Nano letters [Nano Lett] 2022 Jun 08; Vol. 22 (11), pp. 4325-4332. Date of Electronic Publication: 2022 May 17.
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD 20742, USA., Zhang R; Department of Mechanical Engineering, Worcester Polytechnic Institute, Worcester, MA 011609 USA., Ilic R; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA., Liu Y; Department of Mechanical Engineering, Worcester Polytechnic Institute, Worcester, MA 011609 USA., Aksyuk VA; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
Publikováno v:
Communications physics [Commun Phys] 2021; Vol. 4 (1).
Autor:
Wang M; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 United States.; Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States., Zhang R; Department of Mechanical Engineering, Worcester Polytechnic Institute, Worcester, Massachusetts 01609 United States., Ilic R; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 United States., Aksyuk V; Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 United States., Liu Y; Department of Mechanical Engineering, Worcester Polytechnic Institute, Worcester, Massachusetts 01609 United States.
Publikováno v:
Nano letters [Nano Lett] 2020 May 13; Vol. 20 (5), pp. 3050-3057. Date of Electronic Publication: 2020 Apr 13.
Autor:
Krayev A; Horiba Instruments Inc., Novato, California 94949, United States., Krylyuk S; Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States; Theiss Research, Inc., La Jolla, California 92037, United States., Ilic R; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Hight Walker AR; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Bhattarai A; Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States., Joly AG; Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States., Velický M; Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States; School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom., Davydov AV; Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., El-Khoury PZ; Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States.
Publikováno v:
The journal of physical chemistry. C, Nanomaterials and interfaces [J Phys Chem C Nanomater Interfaces] 2020; Vol. 124 (16).