Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Robert P. Rippstein"'
Publikováno v:
IBM Journal of Research and Development. 37:395-410
In 1991 a storage ring designed as a source of X-rays for X-ray lithography was delivered, installed, and commissioned in the IBM Advanced Lithography Facility (ALF) in East Fishkill, New York. Beamlines of two different designs have been constructed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feedfe997fc8c293b547f90e9010dbe3
https://doi.org/10.1147/rd.373.0395
https://doi.org/10.1147/rd.373.0395
Autor:
Alex L. Flamholz, Inna V. Babich, Juan R. Maldonado, Vincent Dimilia, Robert P. Rippstein, L. C. Hsia
Publikováno v:
Microelectronic Engineering. 21:113-116
This paper describes techniques to determine the effective wavelength of x-ray lithography sources. The experimental results give information on the actual x-ray absorption of the resist materials for the x-ray source under test. Results for two beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39eb1f790cad8f39889f2e36d0fa28f0
https://doi.org/10.1016/0167-9317(93)90039-8
https://doi.org/10.1016/0167-9317(93)90039-8
Autor:
Robert P. Rippstein, Cameron J. Brooks, Michael J. Lercel, Shalom J. Wind, Azalia A. Krasnoperova, Alex L. Flamholz, E. Kratschmer
Publikováno v:
SPIE Proceedings.
This paper discusses the resolution capabilities of proximity x-ray lithography (PXRL) system. Exposure characteristics of features designed at 150 nm pitch size: 75 nm dense lines with 1:1 duty ratio, 2D features at 1:1 and 1:2 duty ratios and isola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e669d976821450557d8a31f4293fedf6
https://doi.org/10.1117/12.351118
https://doi.org/10.1117/12.351118
Publikováno v:
SPIE Proceedings.
In this paper, dimensional control of critical features in proximity x-ray lithography is discussed. CD error components attributed to x-ray mask, proximity exposure and resist process are identified. Analysis of linewidth control data at 180 nm and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f662729f0a1b700c37f1091c7dec1b7a
https://doi.org/10.1117/12.309568
https://doi.org/10.1117/12.309568
Autor:
R. J. Amodeo, Ben R. Vampatella, George A. Gomba, Alex L. Flamholz, Carl Stahlhammer, D. A. Heald, Azalia A. Krasnoperova, P. C. Kochersperger, Robert H. Fair, J. P. Silverman, William Chu, Alek C. Chen, Vincent Dimilia, Robert P. Rippstein
Publikováno v:
SPIE Proceedings.
A state-of-the-art proximity x-ray lithography aligner was developed for the Defense Advanced Lithography Program (DALP) and installed in IBM's Advanced Lithography Facility (ALF) in 1995. This aligner was designed to satisfy the manufacturing requir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44a80fdbb710f4c3fe369b04dd149b1b
https://doi.org/10.1117/12.275803
https://doi.org/10.1117/12.275803
Autor:
Robert P. Rippstein, Raymond Robert Ruckel, John C. Granlund, Alfred E. Palumbo, James M. Oberschmidt, Alek C. Chen
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II.
X-ray lithography using a synchrotron light source has received considerable attention in recent years as a method for producing semiconductor device dimensions smaller than 0.35 microns. A number of synchrotrons or Electron Storage Rings (ESR) have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3165d2e891970ac2e4c5f5bc8619eade
https://doi.org/10.1117/12.136017
https://doi.org/10.1117/12.136017
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:2476
The 180 nm ground rule production prototype x-ray lithography aligner was developed for the Defense Advanced Lithography Program (DALP) and installed in IBM’s Advanced Lithography Facility (ALF) in 1995. This aligner is designed to satisfy the manu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::682a1ad959041a184ba50ccb7f4c6eb7
https://doi.org/10.1116/1.589670
https://doi.org/10.1116/1.589670
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:4018
In proximity x‐ray lithography (XRL), two types of illumination are used: full field and scanning. We describe a single mirror condenser for XRL beam lines which provides a high flux of soft x rays. The surface is generally aspheric, designed using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cab7169fc2469d82397e05f8d97d3438
https://doi.org/10.1116/1.587422
https://doi.org/10.1116/1.587422
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2976
An x‐ray flux delivery system consisting of a compact storage ring and dedicated beamlines is now in routine use in the IBM Advanced Lithography Facility in East Fishkill, New York. The beamlines have been designed for use with a stepper that scans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a32bf50f5a29884627da1a14f6018e3f
https://doi.org/10.1116/1.586571
https://doi.org/10.1116/1.586571
Autor:
Robert P. Rippstein, Alex L. Flamholz
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:2002
An integrated x‐ray align and expose system has been installed at Brookhaven National Laboratory National Synchrotron Light Source VUV beam line U2. The system includes the first commercially available x‐ray align and expose system, the Karl Suss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123174a1fc5484086ed5cf444f45ff8b
https://doi.org/10.1116/1.584891
https://doi.org/10.1116/1.584891