Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Robert P. Moerkirk"'
Autor:
Robert P. Moerkirk, Wayne H. Chang, Jong Wu, Doran D. Smith, A. DeAnni, Martin N. Wybourne, Mary-Lloyd LeMeune, Lemonia Fotiadis
Publikováno v:
Solid State Communications. 91:313-317
A technique utilizing changes in the conductance of a quantum wire to measure the detrapping time and density of electron traps is described. The technique permits the study of defects in heterostructure material over a wide range of doping levels an
Publikováno v:
Applied Physics Letters. 64:3151-3153
Large‐area metal‐semiconductor‐metal (MSM) photodetectors are fabricated on molecular beam epitaxy (MBE) grown GaAs material at growth temperatures ranging from 250 to 500 °C. It is shown that materials grown at intermediate temperatures are a
Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4/H2/Ar gas mixtures. Etch rate was determined as a function of gas composition, power density (0.4-1.0W/cm2), pressure (6-25 mTorr), and total flow rate (20-40 sccm). Hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75f946d83d2658969d2d796c06edbbca
https://doi.org/10.21236/ada310955
https://doi.org/10.21236/ada310955
Autor:
Li-Wu Yang, Yu Cun Lu, S. N. Schauer, Weiyu Han, Kenneth A. Jones, Robert P. Moerkirk, L. Calderon, H. S. Lee
Publikováno v:
SPIE Proceedings.
The hole carrier concentration of heavily carbon doped GaAs epilayers (4.7 X 1019 and 9.8 X 1019 cm-3) was increased and the mobility and lattice parameter were decreased by rapid thermal annealing silicon nitride capped samples at temperatures from