Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Robert M. Rassel"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:364-371
This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8466c7acaaa369426c9439bf2c8001e
https://doi.org/10.1109/tmtt.2007.914656
https://doi.org/10.1109/tmtt.2007.914656
Autor:
Robert M. Rassel, David C. Sheridan, Qizhi Liu, Alvin J. Joseph, Bradley A. Orner, Brian P. Gaucher, Xuefeng Liu, Jeffrey B. Johnson
Publikováno v:
Semiconductor Science and Technology. 22:S208-S211
An integrated p-i-n diode for use in SiGe BiCMOS technology applications has been developed. The device may be used into the MMW frequency range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3ac9b9a74f8ba41b736cb2ef97971ac
https://doi.org/10.1088/0268-1242/22/1/s49
https://doi.org/10.1088/0268-1242/22/1/s49
Autor:
David C. Ahlgren, Bradley A. Orner, Robert M. Rassel, David C. Sheridan, Qizhi Liu, James S. Dunn, Mattias E. Dahlstrom, Xuefeng Liu, Alvin J. Joseph
Publikováno v:
physica status solidi c. 3:448-451
We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with fMAX performance reaching 350 GHz that are inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bb953a8c2243a2aeab38aa53dff5bf
https://doi.org/10.1002/pssc.200564170
https://doi.org/10.1002/pssc.200564170
Autor:
Randy L. Wolf, Robert M. Rassel, Shyam Parthasarathy, Mccallum-Cook Ian, Hanyi Ding, K. Newton, Renata Camillo-Castillo, Anthony K. Stamper, Mark D. Jaffe, Alvin J. Joseph, James S. Dunn, Michael J. Zierak, Srikanth Srihari, Vibhor Jain, Nicholas Theodore Schmidt
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1651b1e12c438e8df1171a884ce0492b
https://doi.org/10.1109/bctm.2014.6981278
https://doi.org/10.1109/bctm.2014.6981278
Autor:
Eric A. Johnson, Derrick Liu, Mark D. Jaffe, Anthony K. Stamper, Shyam Parthasarthy, Michael J. Zierak, James S. Dunn, Alvin J. Joseph, Renata Camillo-Castillo, Hanyi Ding, Robert M. Rassel, Venkata Vanakuru, Jeff Gambino, Santosh Sharma
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present for the first time a novel high resistivity bulk SiGe BiCMOS technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p-type silicon substrate is utilized to integrate several SiGe HBTs for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c611243ecd4ee603fe792c409d4bc6d4
https://doi.org/10.1109/bctm.2013.6798183
https://doi.org/10.1109/bctm.2013.6798183
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
In this paper, we discuss a method to extrapolate intrinsic and extrinsic R on components for a JFET. The results provide the guideline to lower R on , hence to achieve competitive “R on vs. pinch off (V off )” benchmark. The optimization impacts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::babd50de28a8e59bef381937cb894b03
https://doi.org/10.1109/bipol.2010.5667942
https://doi.org/10.1109/bipol.2010.5667942
Autor:
B. Guthrie, P. Pokrinchak, B. Leidy, Charles F. Musante, James W. Adkisson, J. Gambino, K. Ackerson, Robert M. Rassel, Edward C. Cooney, D. Meatyard, John G. Twombly, Mark D. Jaffe
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6325f775f93ebad9b141e8724dec854
https://doi.org/10.7567/ssdm.2010.h-9-1
https://doi.org/10.7567/ssdm.2010.h-9-1
A cost-competitive high performance Junction-FET (JFET) in CMOS process for RF & analog applications
Autor:
J. Rascoe, Douglas B. Hershberger, Xiaowei Tian, David L. Harame, Richard A. Phelps, S. Sweeney, Yun Shi, James S. Dunn, Robert M. Rassel, Panglijen Candra, BethAnn Rainey
Publikováno v:
2010 IEEE Radio Frequency Integrated Circuits Symposium.
in this paper, we present a cost-effective JFET integrated in 0.18µm RFCMOS process. The design is highly compatible with standard CMOS process, therefore can be easily scaled and implemented in advanced technology nodes. The design impact on R on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e99aa3effa3bd43b9e96f8c54fc5f47
https://doi.org/10.1109/rfic.2010.5477348
https://doi.org/10.1109/rfic.2010.5477348
Autor:
Peter B. Gray, P. Chapman, M. Gordon, R. Previty-Kelly, Douglas B. Hershberger, Robert M. Rassel, Alan F. Norris, Alvin J. Joseph, S.L. Von Bruns, Mattias E. Dahlstrom, Michael J. Zierak, Michael L. Gautsch, J. Dunn, Panglijen Candra, Natalie B. Feilchenfeld, J. Lukaitis, Renata Camillo-Castillo, S. St Onge, Benjamin T. Voegeli, K. Watson, Nicholas Theodore Schmidt, Z.X. He
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680dcea7dc29df2e8835d3376d5fc255
https://doi.org/10.1109/bipol.2008.4662721
https://doi.org/10.1109/bipol.2008.4662721
Autor:
R. Bolam, Ebenezer E. Eshun, Douglas M. Daley, Natalie B. Feilchenfeld, J. Dunn, Robert M. Rassel, D. Mosher, Douglas D. Coolbaugh, D. Vanslette, K. Newton, Fen Chen, Edward C. Cooney, John J. Benoit, Z.X. He, S. St Onge
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
Two MIM capacitors with capacitance density of 11 and 0.48 fF/um2 were fabricated simultaneously using IBM-s 0.13 um SiGe 8 WL BiCMOS process. Results from DC parametric measurement indicate that these two capacitors compliment each other extremely w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f62460f718201414e07f36354428cdcd
https://doi.org/10.1109/bipol.2008.4662746
https://doi.org/10.1109/bipol.2008.4662746