Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Robert M. Radway"'
Autor:
Luke R. Upton, Guénolé Lallement, Michael D. Scott, Joyce Taylor, Robert M. Radway, Dennis Rich, Mark Nelson, Subhasish Mitra, Boris Murmann
Publikováno v:
2023 24th International Symposium on Quality Electronic Design (ISQED).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9e0b143aeb87cfae9166446b484de77
https://doi.org/10.1109/isqed57927.2023.10129298
https://doi.org/10.1109/isqed57927.2023.10129298
Autor:
Kartik Prabhu, Albert Gural, Zainab F. Khan, Robert M. Radway, Massimo Giordano, Kalhan Koul, Rohan Doshi, John W. Kustin, Timothy Liu, Gregorio B. Lopes, Victor Turbiner, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Guenole Lallement, Boris Murmann, Subhasish Mitra, Priyanka Raina
Publikováno v:
IEEE Journal of Solid-State Circuits. 57:1013-1026
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4569f4b9f2cd6f60158fbbe951c8e1ce
https://doi.org/10.1109/jssc.2022.3140753
https://doi.org/10.1109/jssc.2022.3140753
Autor:
Mark Nelson, Priyanka Raina, Akash Levy, Tony F. Wu, S. Simon Wong, E. Ray Hsieh, Subhasish Mitra, Xin Zheng, H.-S. Philip Wong, Robert M. Radway, Binh Q. Le
Publikováno v:
IEEE Transactions on Electron Devices. 68:4397-4403
HfO2-based resistive RAM (RRAM) is an emerging nonvolatile memory technology that has recently been shown capable of storing multiple bits-per-cell. The energy/delay costs of an RRAM write operation are dependent on the number of pulses required for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1afe0c8b562f883da0b6dc7ae8a54d76
https://doi.org/10.1109/ted.2021.3097975
https://doi.org/10.1109/ted.2021.3097975
Autor:
S. Simon Wong, Y. C. Shih, Subhasish Mitra, M. Nelson, Robert M. Radway, E-Ray Hsieh, Binh Q. Le, Xin Zheng
Publikováno v:
IEEE Electron Device Letters. 42:335-338
We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d100954c3ba9334459d1fb18ef5566
https://doi.org/10.1109/led.2021.3055017
https://doi.org/10.1109/led.2021.3055017
Autor:
Albert Gural, Kalhan Koul, Gregorio B. Lopes, Boris Murmann, Yu-Der Chih, Zainab F. Khan, Subhasish Mitra, Win-San Khwa, Guenole Lallement, Robert M. Radway, Massimo Giordano, Priyanka Raina, Meng-Fan Chang, Victor Turbiner, Timothy Liu, Rohan Doshi, John W. Kustin, Kartik Prabhu
Publikováno v:
VLSI Circuits
CHIMERA is the first non-volatile deep neural network (DNN) chip for edge AI training and inference using foundry on-chip resistive RAM (RRAM) macros and no off-chip memory. CHIMERA achieves 0.92 TOPS peak performance and 2.2 TOPS/W. We scale inferen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d97777dd349912d512d97925ffef8e0
https://doi.org/10.23919/vlsicircuits52068.2021.9492347
https://doi.org/10.23919/vlsicircuits52068.2021.9492347
Autor:
Subhasish Mitra, Tony F. Wu, Binh Quang Le, Mohamed M. Sabry Aly, Robert M. Radway, H.-S. Philip Wong, Yunfeng Xin, Elisa Vianello, Mary Wootters, Paul C. Jolly, Pascal Vivet, Etienne Nowak, Pulkit Tandon, Andrew Bartolo, Zainab F. Khan, Edith Beigne
Publikováno v:
Nature Electronics
Nature Electronics, 2021, 4 (1), pp.71-80. ⟨10.1038/s41928-020-00515-3⟩
Nature Electronics, 2021, 4 (1), pp.71-80. ⟨10.1038/s41928-020-00515-3⟩
Hardware for deep neural network (DNN) inference often suffers from insufficient on-chip memory, thus requiring accesses to separate memory-only chips. Such off-chip memory accesses incur considerable costs in terms of energy and execution time. Fitt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd2d9d4ac350a2de034b3a8b112d4e66
https://cea.hal.science/cea-03759925
https://cea.hal.science/cea-03759925
Autor:
Robert M. Radway, Dennis Rich, Andrew Bartolo, Carlo Gilardo, Binh Q. Le, Subhasish Mitra, Mohamed M. Sabry Aly, H.-S. Philip Wong, Haitong Li, Rebecca Park
Publikováno v:
The Frontiers Collection ISBN: 9783030183370
Coming generations of information technology will process unprecedented amounts of loosely-structured data, including streaming video and audio, natural languages, real-time sensor readings, contextual environments, or even brain signals. The computa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dba0a5afd9ab2c63eae6f5434b7ace9
https://doi.org/10.1007/978-3-030-18338-7_9
https://doi.org/10.1007/978-3-030-18338-7_9
Autor:
E-Ray Hsieh, B. Hodson, Y.C. Shih, Akash Levy, H-S Philip Wong, Binh Quang Le, S. Simon Wong, M. Nelson, Xin Zheng, Subhasish Mitra, Tony F. Wu, Robert M. Radway, Massimo Giordano, Weier Wan, S.K. Osekowsky
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We present the first demonstration of 1T4R Resistive RAM (RRAM) array storing two bits per RRAM cell. Our HfO 2 - based RRAM is built using a logic foundry technology that is fully compatible with the CMOS back-end process. We present a new approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14ba7cfd6ad0360bfa2d414bffb4202
https://doi.org/10.1109/iedm19573.2019.8993514
https://doi.org/10.1109/iedm19573.2019.8993514
Autor:
Tony F. Wu, Andrew Bartolo, Mary Wootters, Pulkit Tandon, Elisa Vianello, Mohamed M. Sabry Aly, Subhasish Mitra, Binh Quang Le, Robert M. Radway, H.-S. Philip Wong, Edith Beigne, Etienne Nowak, Pascal Vivet, Haitong Li, William Hwang, Seungbin Jeong
Publikováno v:
ISSCC
Non-volatility is emerging as an essential on-chip memory characteristic across a wide range of application domains, from edge nodes for the Internet of Things (IoT) to large computing clusters. On-chip non-volatile memory (NVM) is critical for low-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05f44a31208aa0e46dca1cbcab111db2
https://doi.org/10.1109/isscc.2019.8662402
https://doi.org/10.1109/isscc.2019.8662402