Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Robert M. Lavelle"'
Autor:
Brian M. Foley, Sukwon Choi, David W. Snyder, Yiwen Song, Hsien-Lien Huang, Sriram Krishnamoorthy, Craig D. McGray, Jacob H. Leach, Arkka Bhattacharyya, Yingying Zhang, Kevin Ferri, Sarit Zhukovsky, Daniel Shoemaker, Carlos Perez, Tina Hess, Bladimir Ramos-Alvarado, Xiaojia Wang, Jinwoo Hwang, Jon Paul Maria, Robert M. Lavelle, C. Ulises Gonzalez-Valle
Publikováno v:
ACS Applied Materials & Interfaces. 13:40817-40829
β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (EG ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today's commercial wide bandgap power electronics based on G
Autor:
Hongping Zhao, Yiwen Song, Bladimir Ramos-Alvarado, Zixuan Feng, Stefan C. Badescu, Yingying Zhang, Hsien-Lien Huang, Praneeth Ranga, Julia I. Deitz, C. Ulises Gonzalez-Valle, Brian M. Foley, Robert M. Lavelle, Jon Paul Maria, Sukwon Choi, David W. Snyder, Kevin Ferri, Carlos Perez, Xiaojia Wang, Brianna Klein, Albert G. Baca, Sriram Krishnamoorthy, Jinwoo Hwang, Marco D. Santia
Publikováno v:
ACS Applied Materials & Interfaces. 13:38477-38490
Heteroepitaxy of β-phase gallium oxide (β-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the fil
Autor:
Robert M. Lavelle, David W. Snyder, Jianan Song, Rongming Chu, Sang-Woo Han, Thomas N. Jackson, Joan M. Redwing, Sang Ha Yoo, Ziguang Ma
Publikováno v:
IEEE Electron Device Letters. 41:1758-1761
This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the p-type doping was achieved by adjusting the thickness of the pGaN
Autor:
David W. Snyder, Roberto Garcia, Lewis Reynolds, Aubrey Penn, Shisir Devkota, Surya Nalamati, Robert M. Lavelle, Jia Li, Shanthi Iyer, Benjamin Huet
Publikováno v:
ACS Applied Electronic Materials. 2:3109-3120
We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam ep...
Autor:
Yiwen Song, Chi Zhang, James Spencer Lundh, Hsien-Lien Huang, Yue Zheng, Yingying Zhang, Mingyo Park, Timothy Mirabito, Rossiny Beaucejour, Chris Chae, Nathaniel McIlwaine, Giovanni Esteves, Thomas E. Beechem, Craig Moe, Rytis Dargis, Jeremy Jones, Jacob H. Leach, Robert M. Lavelle, David W. Snyder, Jon-Paul Maria, Roy H. Olsson, Joan M. Redwing, Azadeh Ansari, Jinwoo Hwang, Xiaojia Wang, Brian M. Foley, Susan E. Trolier-McKinstry, Sukwon Choi
Publikováno v:
Journal of Applied Physics. 132:175108
AlN thin films are enabling significant progress in modern optoelectronics, power electronics, and microelectromechanical systems. The various AlN growth methods and conditions lead to different film microstructures. In this report, phonon scattering
Autor:
Yiwen, Song, Daniel, Shoemaker, Jacob H, Leach, Craig, McGray, Hsien-Lien, Huang, Arkka, Bhattacharyya, Yingying, Zhang, C Ulises, Gonzalez-Valle, Tina, Hess, Sarit, Zhukovsky, Kevin, Ferri, Robert M, Lavelle, Carlos, Perez, David W, Snyder, Jon-Paul, Maria, Bladimir, Ramos-Alvarado, Xiaojia, Wang, Sriram, Krishnamoorthy, Jinwoo, Hwang, Brian M, Foley, Sukwon, Choi
Publikováno v:
ACS applied materialsinterfaces. 13(34)
β-phase gallium oxide (Ga
Autor:
Yiwen, Song, Praneeth, Ranga, Yingying, Zhang, Zixuan, Feng, Hsien-Lien, Huang, Marco D, Santia, Stefan C, Badescu, C Ulises, Gonzalez-Valle, Carlos, Perez, Kevin, Ferri, Robert M, Lavelle, David W, Snyder, Brianna A, Klein, Julia, Deitz, Albert G, Baca, Jon-Paul, Maria, Bladimir, Ramos-Alvarado, Jinwoo, Hwang, Hongping, Zhao, Xiaojia, Wang, Sriram, Krishnamoorthy, Brian M, Foley, Sukwon, Choi
Publikováno v:
ACS applied materialsinterfaces. 13(32)
Heteroepitaxy of β-phase gallium oxide (β-Ga
Autor:
Cuili Xue, Antonino Lo Verso, Robert M. Lavelle, Huanyu Cheng, Ning Yi, Daniel Erdely, Yuyan Gao, Jia Zhu
Publikováno v:
Mater Today (Kidlington)
Deployment of functional circuits on a 3D freeform surface is of significant interest to wearable devices on curvilinear skin/tissue surfaces or smart Internet-of-Things with sensors on 3D objects. Here we present a new fabrication strategy that can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9c35543cb2590a8c6c6fb2c91e88c67
https://europepmc.org/articles/PMC8846415/
https://europepmc.org/articles/PMC8846415/
Autor:
C. Lewis Reynolds, Yang Liu, Prithviraj Deshmukh, David Snyder, Manish Sharma, Robert M. Lavelle, Shanthi Iyer, Jeffrey Kronz, Surya Nalamati
Publikováno v:
ACS Applied Nano Materials. 2:4528-4537
We report the successful growth of high-quality GaAs1–xSbx nanowires on monolayer graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for the application of a flexible near-infrared photodetector. A systematic and detailed study of NW growt
Autor:
Sean M. Oliver, Nasim Alem, David W. Snyder, Randal Cavalero, Sam Yee, Robert M. Lavelle, Patrick M. Vora, Joshua J. Fox, Saiphaneendra Bachu
Publikováno v:
Journal of Crystal Growth. 542:125609
ZrS2, ZrSe2 and mixed alloy ZrSxSe2−x materials were achieved through chemical vapor transport. The incongruent melting system of Zr-S-Se formed crystalline layered flakes as a transport product that grew up to 2 cm in lateral size with cm-scale fl