Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Robert M. Lammert"'
Publikováno v:
JACS Au, Vol 4, Iss 2, Pp 680-689 (2024)
Externí odkaz:
https://doaj.org/article/95ff415ee5714db1a6fd1de5f23529de
Autor:
Laurent Vaissie, W. Hu, Robert M. Lammert, Neil A. Eschmann, Panayiotis Nikolaou, Boyd M. Goodson, Nicholas Whiting, Michael J. Barlow, Jeffrey E. Ungar
Publikováno v:
Applied Physics B. 106:775-788
Next-generation laser diode arrays with integrated ‘on-chip’ volume holographic gratings can provide high power with spectrally narrowed output that can be tuned about the rubidium D1 line—without causing significant changes to the laser’s fl
Autor:
David J. Brady, Robert M. Lammert, James J. Coleman, Kenneth G. Purchase, Mark L. Osowski, Soonhee Roh, J.S. Hughes
Publikováno v:
ResearcherID
The distributed Bragg pulse shaper (DBPS) is a series of electrically switchable Bragg mirrors on a semiconductor waveguide. The DBPS encodes data packets using parallel electrical signals to set the states of the Bragg mirrors. A broad-band source p
Publikováno v:
ResearcherID
The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with fabricating buried heterostructures (BHs) by a three-step technique are outlined, and a compu
Publikováno v:
Journal of Electronic Materials. 24:1631-1636
A computational diffusion model is used to predict thickness and composition profiles of ternary InxGa1-xAs quantum wells grown by selective-area, atmospheric pressure metalorganic chemical vapor deposition (MOCVD), and its accuracy is investigated.
Autor:
P. Jeffrey Ungar, Thierry Ibach, Robert M. Lammert, Marc Eichhorn, Antoine Berrou, W. Hu, Laurent Vaissié, Martin Schellhorn
Publikováno v:
SPIE Proceedings.
Recent advances of high power and narrow bandwidth laser diodes emitting at 1.9 μm open the path to direct diode pumping of Ho 3+ :YAG lasers. The usual method to pump such laser is to use thulium fiber laser which has an excellent beam quality with
Autor:
Falgun D. Patel, Laurent Vaissié, Mark L. Osowski, Robert M. Lammert, C. Panja, Victor C. Elarde, Jeffrey E. Ungar, S. W. Oh, Yossi Gewirtz
Publikováno v:
Laser Technology for Defense and Security V.
InP based diode lasers are required to realize the next generation of eyesafe applications, including direct rangefinding and HEL weapons systems. We report on the progress of high power eyesafe single spatial and longitudinal mode 1550nm MOPA device
Autor:
P. T. Rudy, S. W. Oh, Yossi Gewirtz, Laurent Vaissié, Robert M. Lammert, Xiaodong Yang, Chun Wang, W. Hu, Victor C. Elarde, Mark L. Osowski, Jeffrey E. Ungar, Falgun D. Patel
Publikováno v:
Laser Technology for Defense and Security V.
Compact, efficient visible lasers are important for heads up displays, pointing and illumination, undersea communications, and less than lethal threat detection. We report on high power red, green, and blue lasers with output powers above 3 watts and
Autor:
Robert M. Lammert, S. Moon, K. Gallup, J. Lucas, C. Panja, Mark L. Osowski, W. Hu, Victor C. Elarde, T. Stakelon, Jeffrey E. Ungar
Publikováno v:
SPIE Proceedings.
High power semiconductor lasers with wavelengths in the eye-safer region have application to a variety of defense, medical and industrial applications. We report on the reliability of high power multimode and single mode InGaAsP/InP diode lasers with
Publikováno v:
IEEE Photonics Technology Letters. 11:1099-1101
High-power master oscillator power amplifiers with nonabsorbing mirrors have been fabricated. These devices exhibit 1.0 and 1.5 W of single-frequency diffraction-limited continuous-wave optical powers at relatively low-amplifier currents of 1.75 and