Zobrazeno 1 - 10
of 108
pro vyhledávání: '"Robert M. Farrell"'
Autor:
Robert M. Farrell, Ian Rowlandson
Publikováno v:
Journal of Electrocardiology. 73:11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::411f61c154008192674c60300fe47029
https://doi.org/10.1016/j.jelectrocard.2022.07.034
https://doi.org/10.1016/j.jelectrocard.2022.07.034
Autor:
Tal Margalith, Daniel Cohen, Benjamin P. Yonkee, John T. Leonard, James S. Speck, Robert M. Farrell, S. P. DenBaars, Tom Mates, Charles A. Forman, Shuji Nakamura, Christopher D. Pynn
Publikováno v:
Journal of Crystal Growth. 464:197-200
P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages of semipolar (2021)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da4cabda5f19409c4c044b0053073ce3
https://doi.org/10.1016/j.jcrysgro.2016.11.058
https://doi.org/10.1016/j.jcrysgro.2016.11.058
Autor:
James S. Speck, Nathan G. Young, Robert M. Farrell, Michael Iza, Shuji Nakamura, Claude Weisbuch, Steven P. DenBaars
Publikováno v:
Journal of Crystal Growth. 455:105-110
We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::101ccd81a0be3b34f3e282ecdec9cd8c
https://doi.org/10.1016/j.jcrysgro.2016.09.074
https://doi.org/10.1016/j.jcrysgro.2016.09.074
Autor:
Asad J. Mughal, Daniel A. Cohen, Anisa Myzaferi, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Robert M. Farrell
Publikováno v:
Optics express. 26(10)
We report continuous-wave (CW) blue semipolar (202¯1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89ff0d6b644729aad5906ea685f7f244
https://pubmed.ncbi.nlm.nih.gov/29801286
https://pubmed.ncbi.nlm.nih.gov/29801286
Autor:
Marco Piccardo, Chi-Kang Li, Svitlana Mayboroda, Bastien Bonef, Robert M. Farrell, James S. Speck, Jacques Peretti, Jean-Marie Lentali, Yuh-Renn Wu, Lucio Martinelli, Marcel Filoche, Claude Weisbuch
Publikováno v:
Gallium Nitride Materials and Devices XIII.
We present a model of carrier distribution and transport accounting for quantum localization effects in disordered semiconductor alloys. It is based on a recent mathematical theory of quantum localization which introduces a spatial function called lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3304503d9f69e929689592ec621835d0
https://doi.org/10.1117/12.2291009
https://doi.org/10.1117/12.2291009
Autor:
Abdullah I. Alhassan, Ahmed Y. Alyamani, Nathan G. Young, Robert M. Farrell, Steven P. DenBaars, James S. Speck, Feng Wu, Shuji Nakamura, Christopher D. Pynn
Publikováno v:
Optics express. 26(5)
The effect of employing an AlGaN cap layer in the active region of green c-plane light-emitting diodes (LEDs) was studied. Each quantum well (QW) and barrier in the active region consisted of an InGaN QW and a thin Al0.30Ga0.70N cap layer grown at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d2cc6b93dafc55bbff6c58edc89b9f1
https://pubmed.ncbi.nlm.nih.gov/29529761
https://pubmed.ncbi.nlm.nih.gov/29529761
Autor:
Robert M. Farrell, Steven P. DenBaars, Changmin Lee, James S. Speck, Ahmed Y. Alyamani, Shuji Nakamura, Chao Shen, Clayton Cozzan, Boon S. Ooi, John E. Bowers
Publikováno v:
Gallium Nitride Materials and Devices XIII.
We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::997a42c72ceb7726c7381d927fb7c47e
https://doi.org/10.1117/12.2315791
https://doi.org/10.1117/12.2315791
Autor:
Robert M. Farrell, Laszlo Littmann
Publikováno v:
Journal of Electrocardiology. 48:717-720
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54579f6f91531a6a6ec5c3b25fcea16d
https://doi.org/10.1016/j.jelectrocard.2015.04.008
https://doi.org/10.1016/j.jelectrocard.2015.04.008
Autor:
Robert M. Farrell, A. Pourhashemi, Shuji Nakamura, Daniel L. Becerra, Daniel A. Cohen, S. P. DenBaars
Publikováno v:
Electronics Letters. 52:2003-2005
Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (2021) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb9ab617fc95b23fdc0b824531c4da35
https://doi.org/10.1049/el.2016.3055
https://doi.org/10.1049/el.2016.3055
Autor:
Tal Margalith, John T. Leonard, Shuji Nakamura, Daniel A. Cohen, James S. Speck, Erin C. Young, SeungGeun Lee, Steven P. DenBaars, Charles A. Forman, Robert M. Farrell, Benjamin P. Yonkee
Publikováno v:
2017 IEEE Photonics Conference (IPC).
We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ef69bda9b797c45632d3994b4af36a
https://doi.org/10.1109/ipcon.2017.8116085
https://doi.org/10.1109/ipcon.2017.8116085