Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Robert Lugg"'
Autor:
Liang Zhu, Robert Lugg
Publikováno v:
ECS Transactions. 44:267-274
Typical IC layouts are simple shapes such as rectangles and 45 degree triangles. However, the high-spatial-frequency components of the mask spectrum cut off by the low-pass pupil will result in the rounded images and pattern distortions. Although opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f88a27ec39bff60df7e9aba22dfa46
https://doi.org/10.1149/1.3694326
https://doi.org/10.1149/1.3694326
Autor:
Robert Lugg
Publikováno v:
Interdisciplinary Studies in Literature and Environment. 23:468-469
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b56118e69209177282802fcd757fb56
https://doi.org/10.1093/isle/isw051
https://doi.org/10.1093/isle/isw051
Publikováno v:
SPIE Proceedings.
Model based optical proximity correction (MB-OPC) has been widely used in advanced lithography process today. However controlling the edge placement error (EPE) and critical dimension (CD) has become harder as the k1 process factor decreases and desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a20f71b0d4acc35c342db32bd8c84e12
https://doi.org/10.1117/12.879947
https://doi.org/10.1117/12.879947
Autor:
Matt St. John, Yasushi Kojima, Randall Brown, Sooryong Lee, Xiaohai Li, Hironobu Taoka, Akemi Moniwa, Robert Lugg, Yang Ping
Publikováno v:
SPIE Proceedings.
In this paper, we present some important improvements on our process window aware OPC (PWA-OPC). First, a CDbased process window checking is developed to find all pinching and bridging errors; Secondly, a rank ordering method is constructed to do pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ac0d7a5ba3f3d0a314a8c3a0e3bcfad
https://doi.org/10.1117/12.849904
https://doi.org/10.1117/12.849904
Autor:
Joo-Tae Moon, Kyoil Koo, Woo-Sung Han, Sung-Gon Jung, Sung-Woon Choi, Young-Chang Kim, Suk-Joo Lee, Xiaohai Li, Sooryong Lee, Frank Amoroso, Sang-Wook Kim, Benjamin D. Painter, Levi D. Barnes, Munhoe Do, Sungsoo Suh, Robert Lugg
Publikováno v:
SPIE Proceedings.
Due to shrinking design nodes and to some limitations of scanners, extreme off-axis illumination (OAI) required and its use and implementation of assist features (AF) to solve depth of focus (DOF) problems for isolated features and specific pitch reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582c0a986196140b8a703f18d96d1d88
https://doi.org/10.1117/12.793040
https://doi.org/10.1117/12.793040
Autor:
Matt St. John, Jung-Hoe Choi, Jason Hwang, Young-Chang Kim, Kyoil Koo, Robert Lugg, Seung-Hee Baek, Munhoe Do, Sooryong Lee, Minjong Hong, Daniel F. Beale
Publikováno v:
SPIE Proceedings.
Although the mask pattern created by fine ebeam writing is four times larger than the wafer pattern, the mask proximity effect from ebeam scattering and etch is not negligible. This mask proximity effect causes mask-CD errors and consequently wafer-C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c100417b96496aba4d01314dac56e884
https://doi.org/10.1117/12.793122
https://doi.org/10.1117/12.793122
Autor:
Sungsoo Suh, Suk-Joo Lee, Tae-Hyuk Ahn, Robert Lugg, Woo-Seok Shim, Jung-Hyeon Lee, Chang-Jin Kang, Seok-Hwan Oh, Sooryong Lee, Frank Amoroso
Publikováno v:
SPIE Proceedings.
Many issues need to be overcome in creating a production-worthy sub-k1 (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4aac52630d1c42ad533dd6a0b171454
https://doi.org/10.1117/12.747661
https://doi.org/10.1117/12.747661
Publikováno v:
SPIE Proceedings.
In the past technology generations, Optical Proximity Correction (OPC) has been applied using a model capturing the Optical proximity effects in a single focal plane. In the newer generations, this method is more and more difficult to maintain becaus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f77b7c33513b3426710e8d9e72eea1
https://doi.org/10.1117/12.746839
https://doi.org/10.1117/12.746839
Autor:
Kunal N. Taravade, Levi D. Barnes, Jeff Mayhew, Kevin Lucas, Robert Lugg, Ben Painter, Glenn Newell
Publikováno v:
SPIE Proceedings.
The upcoming 45nm and 32nm device generations will continue the familiar industry lithography trends of decreased production K1 factor, reduced focus error tolerances and increased pattern density. As previous experience has shown, small changes in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::576b9337f7a17db418ba9b18b3ff2110
https://doi.org/10.1117/12.729012
https://doi.org/10.1117/12.729012
Autor:
Robert Lugg, James P. Shiely, Rick Farnbach, Mike Rieger, Dave Gerold, Matt St. John, Randy Brown, Kevin Lucas, Josh Tuttle
Publikováno v:
SPIE Proceedings.
The upcoming 45nm device node is a point at which newer field-based (i.e., dense pixel-based) OPC simulation methods may begin to show advantages over sparse-sampling ("flash") simulation methods. Field-based simulation provides computational efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103f183cca5041f8cff7fa9ca6cab4a6
https://doi.org/10.1117/12.721593
https://doi.org/10.1117/12.721593