Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Robert Laishram"'
Autor:
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125231-125231-5 (2019)
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky
Externí odkaz:
https://doaj.org/article/f70925930d7a41f7bb2d3583c770d973
Publikováno v:
AIP Advances, Vol 7, Iss 8, Pp 085209-085209-5 (2017)
This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the
Externí odkaz:
https://doaj.org/article/83a57b5d0fe348868fb253005dad5c10
Autor:
Ajay Kumar Visvkarma, Khushwant Sehra, null Chanchal, Robert Laishram, Amit Malik, Sunil Sharma, Sudhir Kumar, D. S. Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
IEEE Transactions on Electron Devices. 69:2299-2306
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8008492cabaf4e039196f992ea9de31
https://doi.org/10.1109/ted.2022.3161402
https://doi.org/10.1109/ted.2022.3161402
Publikováno v:
IETE Technical Review. 39:301-309
This study presents a modified version of MIS-HEMT via incorporation of dielectric pocket with a dual metal enabled gate (DP-DMG) architecture to achieve an enhancement in the electrical performanc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720de3b9a7db6b240bb4e6f0750ad0bd
https://doi.org/10.1080/02564602.2020.1843555
https://doi.org/10.1080/02564602.2020.1843555
Autor:
Chanchal Chanchal, Ajay Kumar Visvkarma, Amit Malik, Robert Laishram, D S Rawal, Manoj Saxena
Publikováno v:
2022 IEEE VLSI Device Circuit and System (VLSI DCS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4a3c2c56a5e1d242f7787e06ab9baa
https://doi.org/10.1109/vlsidcs53788.2022.9811463
https://doi.org/10.1109/vlsidcs53788.2022.9811463
Autor:
null Chanchal, Ajay Kumar Visvkarma, Hardhyan Sheoran, Amit Malik, Robert Laishram, Dipendra Singh Rawal, Manoj Saxena
Publikováno v:
Communications in Computer and Information Science ISBN: 9783031215131
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::049435d949f79c2ea7eccca5e8741e05
https://doi.org/10.1007/978-3-031-21514-8_7
https://doi.org/10.1007/978-3-031-21514-8_7
Publikováno v:
Solid State Electronics Letters, Vol 1, Iss 1, Pp 30-37 (2019)
This study reports the scaling of current collapse in GaN/AlGaN HEMTs with respect to the un-passivated gate drain distance on the gate edge. The source drain current reduction increased from 4 mA to 28 mA, when un-passivated gap increased from 200 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94001cc147c14c296b98a888f2a89ed7
https://doi.org/10.1016/j.ssel.2019.04.002
https://doi.org/10.1016/j.ssel.2019.04.002
Publikováno v:
Computers and Devices for Communication ISBN: 9789811583650
This study presents enhancement of AlGaN/GaN HEMT device electrical characteristics by employing different gate engineered architectures. The dual-metal gate (DMG) structure is combined in different forms with recessed AlGaN and gate dielectric (HfSi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6abda26a15b0a20b8dd041529ee5d9
https://doi.org/10.1007/978-981-15-8366-7_54
https://doi.org/10.1007/978-981-15-8366-7_54
Autor:
Ajay Kumar Visvkarma, Robert Laishram, Sonalee Kapoor, D S Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
Semiconductor Science and Technology. 37:085006
This article reports a Ti/Al-based ohmic contact utilizing a thin interfacial Au layer for improved morphology, edge acuity and low contact resistance for applications to III-Nitride high electron mobility transistors (HEMTs). Conventional Ti/Al cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c9b258e67f2f77846104cbbde3654e
https://doi.org/10.1088/1361-6641/ac6f79
https://doi.org/10.1088/1361-6641/ac6f79
Autor:
Ajay Kumar Visvkarma, null Chanchal, Chandan Sharma, Navneet Kaur Saini, Manoj Saxena, Robert Laishram, D S Rawal
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::270b09a25747054f4202ec65751e10f8
https://doi.org/10.1109/icee50728.2020.9777042
https://doi.org/10.1109/icee50728.2020.9777042