Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Robert L. Bristol"'
Autor:
Carl H. Naylor, Chelsey Dorow, O'brien Kevin P, Kirby Maxey, Arnab Sen Gupta, Andy Hsiao, Tronic Tristan A, Penumatcha Ashish Verma, Scott B. Clendenning, Gosavi Tanay, Matthew V. Metz, Michael Christenson, Sudarat Lee, Robert L. Bristol, Uygar E. Avci, Alaan Urusa, A. A. Oni, Hui Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6592-6598
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41c0f0bcfb98257799a5d37068b6f06
https://doi.org/10.1109/ted.2021.3118659
https://doi.org/10.1109/ted.2021.3118659
Autor:
Mauro J. Kobrinsky, Hui Jae Yoo, Michael Christenson, Ram Krishnamurthy, Mark A. Anders, Robert L. Bristol, Giselle Elbaz, Himanshu Kaul, Kevin L. Lin, Brandon Holybee, Miriam Reshotko
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
An innovative 300mm process architecture that improves interconnect resistance and capacitance is presented. Test structures patterned in novel geometries that lower wiring RC are fabricated, and electrical measurements are compared to simulated valu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74fc20d6e3c0de75cff1a4dc8a10dd9b
https://doi.org/10.1109/iedm13553.2020.9371946
https://doi.org/10.1109/iedm13553.2020.9371946
Autor:
Ibrahim Ban, Robert L. Bristol, Han Wui Then, Pratik Koirala, Tronic Tristan A, Kimin Jun, Rajat Kanti Paul, Nicole K. Thomas, Chouksey Siddharth, Hafez Walid M, D. Staines, W. Rachmady, P. Agababov, Fischer Paul B, T. Talukdar, Kevin Lin, T. Michaelos, Huang Cheng-Ying, Brandon Holybee, B. Krist, Marko Radosavljevic, Manish Chandhok, J. Peck
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We expand on our work in [1] by demonstrating both Si P- and NMOS finfet transistors monolithically integrated with GaN transistors on 300mm Si(111) wafers using 3D integration. With the Si finfet architecture, we are able to take advantage of the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5cdd33209407d260c3d7c77c1e3104f
https://doi.org/10.1109/vlsitechnology18217.2020.9265093
https://doi.org/10.1109/vlsitechnology18217.2020.9265093
Autor:
Sansaptak Dasgupta, Robert L. Bristol, D. Staines, Kimin Jun, Fischer Paul B, J. Peck, Rajat Kanti Paul, Hafez Walid M, Nicole K. Thomas, Ibrahim Ban, Huang Cheng-Ying, Mueller Brennen, W. Rachmady, T. Michaelos, Kevin Lin, Marko Radosavljevic, Chouksey Siddharth, Manish Chandhok, Nidhi Nidhi, Tronic Tristan A, B. Krist, Han Wui Then, P. Agababov, Brandon Holybee, T. Talukdar
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We have demonstrated industry’s first 300mm 3D heterogeneous integration of high performance, low-leakage high-K dielectric metal gate enhancement-mode (e-mode) GaN NMOS and Si PMOS transistors on 300mm high-resistivity (HR) Si(111) substrate, enab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::962c86068c20b2fc0961aaf1161bb031
https://doi.org/10.1109/iedm19573.2019.8993583
https://doi.org/10.1109/iedm19573.2019.8993583
Autor:
Glenn H. Fredrickson, Corey J. Weinheimer, Kris T. Delaney, Robert L. Bristol, David Shykind, Tatsuhiro Iwama, Nabil Laachi
Publikováno v:
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::896562b4a18df0b6f0cad71f99b6178b
https://doi.org/10.2494/photopolymer.27.21
https://doi.org/10.2494/photopolymer.27.21
Autor:
David Shykind, Kris T. Delaney, Bongkeun Kim, Curey J. Weinheimer, Glenn H. Fredrickson, Tatsuhiro Iwama, Nabil Laachi, Robert L. Bristol, Sun-MI Hur
Publikováno v:
Journal of Photopolymer Science and Technology. 26:15-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ececa63e90c923ff97f74f8008424d8f
https://doi.org/10.2494/photopolymer.26.15
https://doi.org/10.2494/photopolymer.26.15
Autor:
Jeanette M. Roberts, Sang H. Lee, Ted Liang, Terence Bacuita, Eric M. Panning, Guojing Zhang, Melissa Shell, Wang Yueh, Bryan J. Rice, Michael J. Leeson, Uday Shah, Robert L. Bristol, Heidi Cao, Manish Chandhok
Publikováno v:
Microelectronic Engineering. 83:672-675
In this paper we present the latest results on developing and integrating extreme ultraviolet lithography (EUVL) at Intel. The world's first commercial EUV exposure tool was installed in Intel's development fab, linked to a resist track, and had succ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e85e6a3f73825024928649f2bd08fea4
https://doi.org/10.1016/j.mee.2005.12.037
https://doi.org/10.1016/j.mee.2005.12.037
Autor:
Robert L. Bristol, Marie Krysak
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 16:023505
As lithography tools continue their progress in both NA and wavelength in pursuit of Moore’s law, we have reached the point where the number of features printed in a single pass can now easily surpass 1 trillion. Statistically, then, one should not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e43ed82a75e87a22f25168ca1f754718
https://doi.org/10.1117/1.jmm.16.2.023505
https://doi.org/10.1117/1.jmm.16.2.023505
Autor:
Nabil Laachi, Tatsuhiro Iwama, Robert L. Bristol, Glenn H. Fredrickson, Bongkeun Kim, David Shykind, Corey J. Weinheimer, Kris T. Delaney
Publikováno v:
SPIE Proceedings.
We have investigated the directed self-assembly (DSA) of cylinder-forming block copolymers inside cylindrical guiding templates. To complement and corroborate our experimental study, we use field-theoretic simulations to examine the fluctuations-indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::590cb8a057569b3b3fa9fc43d6b064f2
https://doi.org/10.1117/12.2046472
https://doi.org/10.1117/12.2046472
Autor:
Robert L. Bristol, Steven M. Banik, Arun Kumar Sundaresan, James M. Blackwell, Jeffrey R. Lancaster, Yongjun Li, Steffen Jockusch, Nicholas J. Turro, Paul Zimmerman
Publikováno v:
Photochemical & Photobiological Sciences. 9:1082-1084
The cycloadducts of tethered naphthalene and anthracene derivatives undergo photochemical ring opening to an electronically excited product with adiabatic yields up to 90%.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22e3a6338b0b3b09284ecb9e29d351b1
https://doi.org/10.1039/c0pp00096e
https://doi.org/10.1039/c0pp00096e