Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Robert Kazinczi"'
Autor:
Nigel R. Farrar, David C. Brandt, Rudy Peeters, David W. Myers, Daniel J. W. Brown, Robert J. Rafac, Norbert R. Bowering, Robert Kazinczi, Daniel Smith, Noreen Harned, Silvia De Dea, Daniel J. Riggs, Bruno La Fontaine, Igor V. Fomenkov, Michael Purvis, Alex I. Ershov, Hans Meiling, Alberto Pirati
Publikováno v:
SPIE Proceedings.
This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion double patterning techno
Autor:
Rudy Peeters, Silvia De Dea, David C. Brandt, Robert J. Rafac, Daniel J. W. Brown, Daniel J. Riggs, Norbert R. Bowering, Alex I. Ershov, Hans Meiling, Robert Kazinczi, Alberto Pirati, David W. Myers, Noreen Harned, Daniel Smith, Igor V. Fomenkov, Bruno La Fontaine, Nigel R. Farrar
Publikováno v:
SPIE Proceedings.
Laser produced plasma (LPP) light sources have been developed as the primary approach for EUV scanner imaging of circuit features in sub-20nm devices in high volume manufacturing (HVM). This paper provides a review of development progress and readine
Autor:
David Ockwell, Robert Kazinczi, Ron Kool, Rudy Peeters, Noreen Harned, Judon Stoeldraijer, Henk Meijer, Jan-Willem van der Horst, Peter Kuerz, Sjoerd Lok, Guido Schiffelers, Richard Droste, Erwin Antonius Martinus Van Alphen, Martin Lowisch, Hans Meiling, Eelco van Setten
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
All six NXE:3100, 0.25 NA EUV exposure systems are in use at customer sites enabling device development and cycles of learning for early production work in all lithographic segments; Logic, DRAM, MPU, and FLASH memory. NXE EUV lithography has demonst
Autor:
Igor Bouchoms, Stefan Weichselbaum, Pieter Gunter, Jan Jaap Kuit, Martijn Leenders, Rob van Ballegoij, Bart Dinand Paarhuis, Marcel Hendrikus Maria Beems, Roelof de Graaf, Martin Verhoeven, Robert Kazinczi
Publikováno v:
SPIE Proceedings.
Mainstream high-end lithography is currently focusing on 32 nm node and 22 nm node where 1.35 NA immersion technology is well established for the most critical layers. Double-patterning and spacer-patterning techniques have been developed and are bei
Autor:
Joost Bekaert, Dirk Jürgens, Gert Streutker, Wilfred Endendijk, J. Verbeeck, Robert John Socha, Andre Engelen, Bert van Drieenhuizen, Daniel Corliss, Melchior Mulder, Anita Bouma, Cas Johannes Petrus Maria Van Nuenen, Greg McIntyre, Bastian Trauter, Oscar Noordman, Joerg Zimmermann, Robert Kazinczi, Bart Laenens, Wim Bouman
Publikováno v:
SPIE Proceedings.
This paper describes the principle and performance of FlexRay, a fully programmable illuminator for high NA immersion systems. Sources can be generated on demand, by manipulating an array of mirrors instead of the traditional way of inserting optical
Autor:
Dror Kasimov, Ingrid Minnaert-Janssen, Ilan Englard, Jo Finders, Frank Duray, Robert Kazinczi, Shmoolik Mangan, Amir Sagiv, Andre Engelen
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moves to 3X technology nodes and below, holistic lithography source mask optimization (SMO) methodology targets an increase in the overall litho performance with improved process windows. The typical complexity of both m
Autor:
Melchior Mulder, Bert van Drieenhuizen, Stephen Hsu, Michael Patra, András G. Major, Dirk Jürgens, Keith Gronlund, Oscar Noordman, Johannes Eisenmenger, Markus Degünther, Robert Kazinczi, Gert Streutker, Andre Engelen
Publikováno v:
SPIE Proceedings.
This paper describes the principle and performance of a fully programmable illuminator for a high-NA immersion system. Sources can be generated on demand, by manipulating an array of mirrors instead of the traditional way of inserting optical element
Autor:
Shmoolik Mangan, Jo Finders, Dror Kasimov, Amir Sagiv, Robert Kazinczi, Ingrid Minnaert-Janssen, Frank Duray, Andre Engelen, Ilan Englard
Publikováno v:
SPIE Proceedings.
As the semiconductor industry moved to 4X technology nodes and below, low-k 1 ArF lithography approached the theoretical limits of single patterning resolution, a regime typically plagued by marginally small process windows. In order to widen the pro
Autor:
Frank Hartung, Robert Kazinczi, Scott Halle, Young O. Kim, Frank Rohmund, Jaione Tirapu-Azpiroz, Joerg Zimmermann, Geoffrey W. Burr, John A. Hoffnagle, Rene Carpaij, Joost Hageman, Daniel Corliss, Bernhard Kneer, Saeed Bagheri, Christoph Hennerkes, Carsten Russ, Michael S. Hibbs, Manfred Maul, Alfred Wagner, Donis G. Flagello, Greg McIntyre, Moutaz Fakhry, Tom Faure, Martin Burkhardt, Alan E. Rosenbluth, Kafai Lai, Andre Engelen, Kehan Tian, Remco Jochem Sebastiaan Groenendijk, Emily Gallagher, David O. S. Melville
Publikováno v:
SPIE Proceedings.
We demonstrate experimentally for the first time the feasibility of applying SMO technology using pixelated illumination. Wafer images of SRAM contact holes were obtained to confirm the feasibility of using SMO for 22nm node lithography. There are st
Autor:
Jo Finders, Ingrid Minnaert-Janssen, Rachel Ren, Paul Frank Luehrmann, Ryan Gibson, Craig Hickman, Frank Duray, Robert Kazinczi, Nicole Schoumans, Lior Shoval, Baukje Wisse, Yair Elblinger, Yaron Cohen, Liesbeth Reijnen, Michael Ben-Yishai, Merri L. Carlson, Dan Rost, Ilan Englard, Shmoolik Mangan, Thomas Theeuwes, Michael B. Garrett, Erik Byers
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography a difficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replaced by a more com