Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Robert Karsthof"'
Autor:
Misagh Ghezellou, Piyush Kumar, Marianne E. Bathen, Robert Karsthof, Einar Ö. Sveinbjörnsson, Ulrike Grossner, J. Peder Bergman, Lasse Vines, Jawad Ul-Hassan
Publikováno v:
APL Materials, Vol 11, Iss 3, Pp 031107-031107-10 (2023)
One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limiting defect,
Externí odkaz:
https://doaj.org/article/669257e4429c4e43ad36d1841f6fec1d
Autor:
Jon Borgersen, Robert Karsthof, Vegard Rønning, Lasse Vines, Holger von Wenckstern, Marius Grundmann, Andrej Yu Kuznetsov, Klaus Magnus Johansen
Publikováno v:
AIP Advances, Vol 13, Iss 1, Pp 015211-015211-5 (2023)
Significant resistivity variations have previously been observed in oxides subjected to relatively low ion irradiation doses, nominally insufficient to generate the amount of bulk defects needed to explain the phenomena. In an effort to unveil the un
Externí odkaz:
https://doaj.org/article/6bf52b3829f54344b4c533d2ff9efcd1
Autor:
Robert Karsthof, Ymir Kalmann Frodason, Augustinas Galeckas, Philip Michael Weiser, Vitaly Zviagin, Marius Grundmann
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 11, Pp n/a-n/a (2022)
Nickel oxide is a versatile p‐type semiconducting oxide with many applications in optoelectronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent oxide se
Externí odkaz:
https://doaj.org/article/00576e54c122425ca969021a21eb5686
Publikováno v:
APL Materials, Vol 8, Iss 12, Pp 121106-121106-7 (2020)
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doped NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites substitutionally, producing
Externí odkaz:
https://doaj.org/article/9f6ca7ad03f04e9e9f4da1ae4d01327b
Autor:
Augustinas Galeckas, Robert Karsthof, Kingsly Gana, Angela Kok, Marianne Etzelmüller Bathen, Lasse Vines, Andrej Kuznetsov
Publikováno v:
Physica Status Solidi A, 220 (10)
Physica Status Solidi (a) applications and materials science
Physica Status Solidi (a) applications and materials science
The carrier lifetime control over 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2 lifetime killer sites is reported. The defect developments upon typical SiC processing steps, such as
Publikováno v:
Materials Science Forum, 1062
Silicon carbide (SiC) is a wide band-gap semiconductor of great technological importance, showing promise for application areas ranging from quantum computing and communication to power devices. Vital in both the contexts of power devices and quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9024a8fe73ff739fa240504cc4a0849d
http://hdl.handle.net/10852/99724
http://hdl.handle.net/10852/99724
Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ac3ee7982ba50fc4c6e526e06d1a485
http://hdl.handle.net/10852/90988
http://hdl.handle.net/10852/90988
Autor:
Robert Karsthof, Vincent Sallet, Marianne Etzelmüller Bathen, Augustinas Galeckas, Lasse Vines, Andrej Yu. Kuznetsov, Aymeric Delteil
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2021, 104 (4), ⟨10.1103/PhysRevB.104.045120⟩
Physical Review B, 104 (4)
Physical Review B, American Physical Society, 2021, 104 (4), ⟨10.1103/PhysRevB.104.045120⟩
Physical Review B, 104 (4)
Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication, and sensing applications. However, factors such as emission brightness, purity. and indistinguishability are limited by interactions bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb57897e68ea324d8f13e6716f41078c
https://hal.archives-ouvertes.fr/hal-03284779
https://hal.archives-ouvertes.fr/hal-03284779
Publikováno v:
Physical Review B. 102
The development of defect populations after proton irradiation of $n$-type $4H$-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive model is suggested describ
Publikováno v:
Physical Review Materials. 4
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect ${\mathrm{V}}_{\mathrm{Ni}}$ (nickel vacancy) in the wide-gap $p$-type semiconductor nickel oxide (NiO). ${\mathrm{V}}_{\mathrm{Ni}