Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Robert Joseph Therrien"'
Autor:
J.D. Brown, Robert Joseph Therrien, W. Nagy, R. Borges, Kevin J. Linthicum, Thomas Gehrke, P. Rajagopal, Edwin L. Piner, Sameer Singhal, Jerry W. Johnson, John C. Roberts, Andrei Vescan
Publikováno v:
physica status solidi (c). :52-56
GaN grown on Si is currently the only pathway towards high volume manufacturing of GaN based RF devices. In this paper we present the technological status of GaN grown on 100 mm Si substrates. Optimised growth, accounting for the lattice and thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdec78b17bd7d5c5d72671b3ac1763a0
https://doi.org/10.1002/pssc.200390106
https://doi.org/10.1002/pssc.200390106
Autor:
Robert Joseph Therrien, Sameer Singhal, Ric Borges, Andrei Vescan, Edwin L. Piner, J.D. Brown
Publikováno v:
Solid-State Electronics. 46:1535-1539
The group III-nitride material system has been demonstrated by many groups to produce high performance, heterostructure field effect transistors (HFETs). AlGaN/GaN heterostructures yield high two-dimensional electron gas densities with high carrier m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0019a9a31256ac26296279acbb19e2
https://doi.org/10.1016/s0038-1101(02)00101-6
https://doi.org/10.1016/s0038-1101(02)00101-6
Autor:
Kwang Hyeon Baik, Kevin J. Linthicum, Edwin L. Piner, B. S. Kang, S. N. G. Chu, Suhyun Kim, Jerry W. Johnson, C. R. Abernathy, Stephen J. Pearton, John C. Roberts, Brent P. Gila, Fan Ren, Pradeep Rajagopal, Robert Joseph Therrien
Publikováno v:
Applied Physics Letters. 85:2962-2964
AlGaN∕GaN high-electron-mobility transistors (HEMTs) show a strong dependence of source∕drain current on the piezoelectric-polarization-induced two-dimensional electron gas. The spontaneous and piezoelectric-polarization-induced surface and inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f722632194631fe8ae1799b9521a21f
https://doi.org/10.1063/1.1800282
https://doi.org/10.1063/1.1800282
Autor:
Edwin L. Piner, Sameer Singhal, Andrew Edwards, Robert Joseph Therrien, Apurva Chaudhari, Wayne Johnson, Kevin J. Linthicum, W. Nagy, Allen W. Hanson, John Roberts, Isik C. Kizilyalli, Pradeep Rajagopal, Quinn Martin, Todd Nichols
Publikováno v:
MRS Proceedings. 1068
In the last decade, GaN-on-Si has progressed from fundamental crystal growth studies to product realization and reliability demonstration. GaN-on-Si HEMTs addressing cellular, WiMAX, and broadband RF applications are now commercially available and of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f347da0ac6b31c9f3de8842c39963ce9
https://doi.org/10.1557/proc-1068-c04-01
https://doi.org/10.1557/proc-1068-c04-01
A Comparison of AlGaN/GaN HFETs on Si Substrates in Ceramic Air Cavity and Plastic Overmold Packages
Autor:
Apurva Chaudhari, Sameer Singhal, Jerry W. Johnson, Andrew Edwards, C. Park, C. Snow, Kevin J. Linthicum, Robert Joseph Therrien, W. Nagy, Allen W. Hanson, Isik C. Kizilyalli
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
AlGaN/GaN HFETs on Si substrates have been assembled in ceramic air cavity and plastic overmold packages. Thermal, DC, small and large signal RF and reliability characterization have been performed on both types of devices. Thermal characterization s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab38c43f3d937578f58e233433511bd6
https://doi.org/10.1109/mwsym.2007.379981
https://doi.org/10.1109/mwsym.2007.379981
Autor:
T. Li, A.P. Edwards, Edwin L. Piner, Sameer Singhal, C. Park, Pradeep Rajagopal, Robert Joseph Therrien, K. J. Linthicum, I. C. Kizilyalli, J. W. Johnson, A.W. Hanson, A. Chaudhari
Publikováno v:
[Reliability of Compound Semiconductors] ROCS Workshop 2006.
GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c51b5b4af8bc38abae3e91885517a7ec
https://doi.org/10.1109/rocs.2006.323391
https://doi.org/10.1109/rocs.2006.323391
Autor:
Robert Joseph Therrien, T. Li, A. Chaudhari, P. Rajagopal, J. Marquart, J. W. Cook, S. Singhal, C. Park, J. Willamson, A.W. Hanson, J. W. Johnson, K. Linthicum, Andrew Edwards, Edwin L. Piner, Isik C. Kizilyalli, W. Nagy
Publikováno v:
2006 64th Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6fb1d16a5c0428e3e5a494918615ee0
https://doi.org/10.1109/drc.2006.305160
https://doi.org/10.1109/drc.2006.305160
Autor:
Kevin J. Linthicum, P. Rajagopal, Sameer Singhal, Jerry W. Johnson, Isik C. Kizilyalli, B. Preskenis, Robert Joseph Therrien, A. Chaudhari, W. Nagy, J. Riddle, J. Willamson, J. Marquart, O. Zhitova, A.W. Hanson
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
AlGaN/GaN HFETs on Si substrates are tested under OFDM modulations and show excellent performance from 3.3GHz to 3.8GHz. Performance on an 8mm device (NPT35010) in power small outline package (PSOP2) shows 1.5W output power, 11.2dB gain, 28.6% drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ea8c369a6d59aab103a13f4bdd8892
https://doi.org/10.1109/mwsym.2006.249732
https://doi.org/10.1109/mwsym.2006.249732
Autor:
J. Marquart, Kevin J. Linthicum, Sameer Singhal, A.W. Hanson, P. Rajagopal, Jerry W. Johnson, R. Borges, A. Chaudhari, Robert Joseph Therrien, W. Nagy, C. Park, Andrew Edwards, Isik C. Kizilyalli
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
AlGaN/GaN heterostructure field effect transistors (HFETs) were fabricated with and without source field plates (SFP) on high resistivity Si (111) substrates. A single chip GaN HFET with a SFP achieved a saturated output power (Psat) of 368W (10.2W/m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575b893132a02fbd749ab24b854556bf
https://doi.org/10.1109/iedm.2005.1609410
https://doi.org/10.1109/iedm.2005.1609410
Autor:
Kevin J. Linthicum, Edwin L. Piner, Sameer Singhal, Jerry W. Johnson, T. Li, Robert Joseph Therrien, John C. Roberts, A.W. Hanson, P. Rajagopal, Isik C. Kizilyalli
Publikováno v:
2006 International Electron Devices Meeting.
AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfa7ae2cdcd19f218a164147d779c7ee
https://doi.org/10.1109/iedm.2006.346798
https://doi.org/10.1109/iedm.2006.346798