Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Robert John Stephenson"'
Autor:
Robert John Stephenson, Hideki Takeuchi, Hiu Yung Wong, Dmitri Choutov, K. Doran Weeks, Nyles Cody, Richard Burton, Robert J. Mears, Shuyi Li, Marek Hytha, Yi-Ann Chen, Daniel Connelly
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Insertion of partial monolayers of oxygen during silicon epitaxy (OI) has been shown experimentally and by simulation to facilitate the blocking interstitials during oxidation and thus to enable precision engineering of dopant profiles. This invited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10bf0f509a171d2a6932096b5e7b2c42
https://doi.org/10.1109/edtm47692.2020.9117944
https://doi.org/10.1109/edtm47692.2020.9117944
Autor:
Richard Burton, Marek Hytha, Robert J. Mears, Dmitri Choutov, Daniel Connelly, Pavel Fastenko, Robert John Stephenson, Suman Datta, Hideki Takeuchi, Nyles W. Cody, Nidhi Agrawal, Doran Weeks
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 481-486 (2018)
Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d1e09f90386087a446fb5db83211489
https://ieeexplore.ieee.org/document/8094923/
https://ieeexplore.ieee.org/document/8094923/
Autor:
Keith Doran Weeks, Robert J. Mears, Marek Hytha, Nyles Cody, Richard Burton, Pavel Fastenko, Robert John Stephenson, Daniel Connelly, Hideki Takeuchi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1173-1178 (2018)
Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e70f109b253f544f6a11c3feab62683f
https://doi.org/10.1109/jeds.2018.2872689
https://doi.org/10.1109/jeds.2018.2872689
Autor:
Y.A. Chen, Marek Hytha, Robert J. Mears, Jeffrey Smith, Robert John Stephenson, Suman Datta, Hideki Takeuchi
Publikováno v:
DRC
In this work, we investigate CMOS compatible oxygen-inserted Silicon (OI) n-channel MOSFETs with high-K/metal gate stack. Initial results for high-K/metal gate OI transistors show (i) 2.7x lower gate leakage for matched electrical oxide thickness, TO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d81dc6b7d632cee4b64dac3acebbafc
https://doi.org/10.1109/drc.2018.8442231
https://doi.org/10.1109/drc.2018.8442231
Autor:
Xiangyang Huang, Robert John Stephenson, Nattapol Damrongplasit, Tiehui Liu, Nyles W. Cody, Hideki Takeuchi, Marek Hytha, Robert J. Mears, Nuo Xu
Publikováno v:
IEEE Transactions on Electron Devices. 61:3345-3349
An experimental and simulation study of short- channel planar bulk nMOSFET performance enhancement achieved with oxygen insertion technology is presented. The benefits of this technology for low-power digital logic circuits make it a promising evolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a198679056e985af63bc73179b831301
https://doi.org/10.1109/ted.2014.2342496
https://doi.org/10.1109/ted.2014.2342496
Autor:
Marek Hytha, A. Yiptong, Xiangyang Huang, Nuo Xu, Nyles W. Cody, Robert John Stephenson, Nattapol Damrongplasit, Hideki Takeuchi, Tiehui Liu, Robert J. Mears
Publikováno v:
IEEE Transactions on Electron Devices. 60:1790-1793
The benefit of supersteep retrograde (SSR) channel doping for suppressing short-channel effects in planar bulk MOSFET performance is studied via technology computer-aided design simulation of devices with gate length Lg = 28 nm. It is found that drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b48045074cbe0afa47433f217785e1
https://doi.org/10.1109/ted.2013.2253105
https://doi.org/10.1109/ted.2013.2253105
Autor:
Tiehui Liu, Robert J. Mears, Marek Hytha, Hideki Takeuchi, Nattapol Damrongplasit, Robert John Stephenson, Nuo Xu, Nyles W. Cody
Publikováno v:
2014 Silicon Nanoelectronics Workshop (SNW).
An oxygen-inserted quasi-planar segmented channel MOSFET design is proposed and studied for monolithic system-on-chip applications. Projections indicate that it will provide for higher performance than bulk FinFET technology at the 10 nm node, due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabe6d989b252db87cd71c0bf8a6799d
https://doi.org/10.1109/snw.2014.7348549
https://doi.org/10.1109/snw.2014.7348549
Autor:
Stephen R. Elliott, Pavel Krecmer, A. M. Moulin, Trevor Rayment, Robert John Stephenson, Mark E. Welland
Publikováno v:
Science. 277:1799-1802
Reversible, controllable optical nanocontraction and dilatation in a chalcogenide glass film was induced by polarized light, and a direct correlation of this optomechanical effect with the reversible optical-induced optical anisotropy (dichroism) als
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58517e1e058441a1f13e59803df0d20a
https://doi.org/10.1126/science.277.5333.1799
https://doi.org/10.1126/science.277.5333.1799
Publikováno v:
Review of Scientific Instruments. 68:1448-1454
A combined atomic force microscope (AFM) and scanning near-field optical microscope (SNOM) has been constructed to obtain images under liquids. In this combined AFM-SNOM an inverted ac mode configuration is used where the AFM cantilever is driven by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::523bceea9b5e3e7596663ab84cc7f8d4
https://doi.org/10.1063/1.1147937
https://doi.org/10.1063/1.1147937
Publikováno v:
Review of Scientific Instruments. 67:3891-3897
Near‐field imaging is a means of exceeding the diffraction limit in optical microscopy to yield subwavelength resolution optical images of a sample surface. In order to achieve such high resolution, it is necessary to scan the measurement probe abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1206f0a5bac1a2ec0ae0a56a0116de45
https://doi.org/10.1063/1.1147289
https://doi.org/10.1063/1.1147289