Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Robert John Socha"'
Autor:
Robert John Socha
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The resolution concept of k1 is introduced along with various methods to reduce the k1 through resolution enhancement techniques. The edge placement error (EPE) of a 5nm node SRAM is analyzed in detail for aligning a via 0 (V0) layer to the metal 0 (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291f217ace45b3c68f05dcaa2514fd0b
https://doi.org/10.1109/iitc51362.2021.9537543
https://doi.org/10.1109/iitc51362.2021.9537543
Autor:
Robert John Socha
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIV.
The edge placement error (EPE) of a 5nm node SRAM is examined in detail for aligning a via 0 (V0) layer to the metal 0 (M0) layer. These layers are optimized with source mask optimization, and the EPE is minimized from stochastics, global critical di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f072885ca8947b2033eb857f747b55
https://doi.org/10.1117/12.2554799
https://doi.org/10.1117/12.2554799
Autor:
Igor Matheus Petronella Aarts, Robert John Socha, Chris de Ruiter, Manouk Rijpstra, Krishanu Shome, Sudhar Raghunathan, Jonathan Y. Lee, Leendertjan Karssemeijer, Jan Hermans, Boris Menchtchikov, Philippe Leray, Chumeng Zheng, Ralph Brinkhof, Floris Teeuwisse, Henry Megens, Chung-Tien Li, Irina Lyulina
Publikováno v:
Optical Microlithography XXXI
Three methods to minimize the impact of alignment mark asymmetry on overlay variation are demonstrated. These methods are measurement based optimal color weighting (OCW), simulation based optimal color weighting, and wafer alignment model mapping (WA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bf79f4985432843b457fcd33d09e422
https://doi.org/10.1117/12.2297493
https://doi.org/10.1117/12.2297493
Autor:
Robert John Socha, Sudharshanan Raghunathan, Christiane Jehoul, Paul Tuffy, Hielke Schoonewelle, Irina Lyulina, Boris Menchtchikov, Philippe Leray, Patrick Tinnemans
Publikováno v:
SPIE Proceedings.
In the process nodes of 10nm and below, the patterning complexity, along with multiple pattern processing and the advance materials required, has in turn resulted in a need to optimize wafer alignment mark simulation capabilities in order to achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00541ef775402a5fd98bf2eeafd64f08
https://doi.org/10.1117/12.2259750
https://doi.org/10.1117/12.2259750
Publikováno v:
SPIE Proceedings.
Mask 3D (M3D) effects remain a significant challenge affecting EUV lithography (EUVL) imaging performance due to the comparable sizes of the mask and the EUV wavelength. Pre-compensation with the insertion of sub-resolution assist features (SRAFs) ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae38c332cbfbc6a77488b7e01774b152
https://doi.org/10.1117/12.2260160
https://doi.org/10.1117/12.2260160
Autor:
Philippe Leray, Boris Menchtchikov, Rich Wise, Paul Tuffy, Hielke Schoonewelle, Christiane Jehoul, Patrick Tinnemans, Jun Belen, Sudhar Raghunathan, Robert John Socha, Eric Richard Kent
Publikováno v:
SPIE Proceedings.
In the process nodes of 10nm and below, the patterning complexity along with the processing and materials required has resulted in a need to optimize alignment targets in order to achieve the required precision, accuracy and throughput performance. R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f32ad7befe23765cf8a33e960f07b68
https://doi.org/10.1117/12.2219491
https://doi.org/10.1117/12.2219491
Autor:
Jan Pieter Kuijten, Scott Warwick, Will Conley, Lloyd C. Litt, Arjan Verhappen, Robert John Socha, Martin Chaplin
Publikováno v:
Microelectronic Engineering. 83:1094-1097
This paper presents the details on the use of dual illumination conditions through double exposure to support the imaging of contact holes through pitch for 65nm node applications. Data generated from a 0.85 NA ArF ASML TWINSCAN(TM) system will be pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6be7be70173f473dc014244456ae2e9d
https://doi.org/10.1016/j.mee.2006.01.168
https://doi.org/10.1016/j.mee.2006.01.168
Autor:
Wei Wu, Kevin Lucas, Pat Cook, Stephen Hsu, Doug Van Den Broeke, Chris Progler, Robert John Socha, Will Conley, Stefan van de Goor, Erika Schaefer, Arjan Verhappen, Kurt E. Wampler, Bernie Roman, Thomas Laidig, Bryan S. Kasprowicz, Jan Pieter Kuijten, Lloyd C. Litt
Publikováno v:
Microelectronic Engineering. :393-397
Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::397e1b59e672fdb603829ab0f688bd3c
https://doi.org/10.1016/j.mee.2004.12.051
https://doi.org/10.1016/j.mee.2004.12.051
Publikováno v:
Microelectronic Engineering. :57-64
A rigorous computationally fast technique for optimizing the illumination is demonstrated based on Hopkins imaging formulation for partial coherent imaging. The technique optimizes the illumination by changing selecting areas of the illuminator, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a56ab782a91ea11f813749298765b377
https://doi.org/10.1016/s0167-9317(02)00516-6
https://doi.org/10.1016/s0167-9317(02)00516-6
Publikováno v:
Microelectronic Engineering. :137-140
Rigorous 3-D electromagnetic analysis is used to examine the actual near field characteristics and assess the resulting effects on imaging of light passing through serifs and hammer head line-ends in optical proximity correction (OPC) of photomasks.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad7bb1a2e8bd9148f7434485464974a9
https://doi.org/10.1016/s0167-9317(98)00030-6
https://doi.org/10.1016/s0167-9317(98)00030-6