Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Robert J. Schuelke"'
Publikováno v:
Journal of Applied Physics. 85:5864-5866
In this article, we present an experimental study of the impact of the write current wave form on high frequency magnetic recording. It has been found that, at high recording frequencies, current overshoot reduces transition broadening, overwrite deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee8b7fd3ad859fd4193346421db4b883
https://doi.org/10.1063/1.369942
https://doi.org/10.1063/1.369942
Publikováno v:
Proceedings of 17th International Conference of the Engineering in Medicine and Biology Society.
This work presents the results of a study using ventricular electrogram signals to identify the heart's evoked response following an electrical stimulus from a pacing electrode. Acute data were collected in vivo from seven human subjects and analyzed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa049cec9d8988260a4f02c3d8598d9e
https://doi.org/10.1109/iembs.1995.575135
https://doi.org/10.1109/iembs.1995.575135
Autor:
Robert J. Schuelke, Mark Lundstrom
Publikováno v:
Solid-State Electronics. 25:683-691
Computation of the equilibrium electrostatic potential and energy band diagram of semiconductor devices with nonuniform composition is considered. We first establish the relationship between the electrostatic potential and the energy band edges and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c1f4fa8142cae6a8cef30f56537478d
https://doi.org/10.1016/0038-1101(82)90195-2
https://doi.org/10.1016/0038-1101(82)90195-2
Autor:
Robert J. Schuelke, Mark Lundstrom
Publikováno v:
Solid-State Electronics. 27:1111-1116
A closed-form expression for the current-voltage characteristics of isotype heterojunctions is developed. Unlike previous treatments of this problem which considered only thermionic emission, this theory, in analogy to metal-semiconductor theory, inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7808255a556891c04823e388006abd49
https://doi.org/10.1016/0038-1101(84)90051-0
https://doi.org/10.1016/0038-1101(84)90051-0
Publikováno v:
Solar Cells. 15:73-86
The improvement of solar cell performance through the use of semiconductor heterostructures is an area of current interest. One particular application involves the use of a graded bandgap structure to achieve an increase in the open-circuit voltage V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec66934cdf2a3dba9f70f49711bc6a7
https://doi.org/10.1016/0379-6787(85)90074-2
https://doi.org/10.1016/0379-6787(85)90074-2
Autor:
Robert J. Schuelke, Mark Lundstrom
Publikováno v:
IEEE Transactions on Electron Devices. 30:1151-1159
A numerical method for analyzing heterostructure semiconductor devices is described. The macroscopic semiconductor equations for materials with position-dependent dielectric constant, bandgap, and densities-of-states are first cast into a form identi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c55aa2f99a88d75284312c173446087
https://doi.org/10.1109/t-ed.1983.21271
https://doi.org/10.1109/t-ed.1983.21271
Autor:
Robert J. Schuelke, K.P. Pande
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 2:29-31
A modified version of a recently proposed cost model for millimeter and microwave integrated circuits is applied to the cost analysis of optoelectronic integrated circuits. The particular example that is examined is a four-function receiver module fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6cf6a1cc0697f8be199192452c7050
https://doi.org/10.1109/66.17001
https://doi.org/10.1109/66.17001
Autor:
K.P. Pande, J.M. Van Hove, R.M. Nagarajan, G.P. Thomes, J.D. Jorgenson, Edward Yi Chang, Robert J. Schuelke
Publikováno v:
IEEE Electron Device Letters. 9:530-532
Current-voltage and initial RF measurements are presented on a double-heterojunction HEMT (high-electron-mobility transistor) structure designed for power MMIC applications. The device structure is grown by molecular-beam epitaxy and uses a spatially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c1d63b9a6e11ae7630cfda76bcb2501
https://doi.org/10.1109/55.17834
https://doi.org/10.1109/55.17834