Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Robert J. Kavanagh"'
Autor:
Sang-Jun Choi, Joo-Tae Moon, George G. Barclay, Yun-Sook Chae, Hyun-Woo Kim, Robert J. Kavanagh, Ji-Soo Kim, Sang-Gyun Woo, Sook Lee
Publikováno v:
Journal of Photopolymer Science and Technology. 15:529-534
It is expected that ArF lithography will be introduced for device manufacturing for sub-100nm nodes, as high NA ArF step and scan systems (NA=O.75) become available. We previously reported on a platform, based on a vinyl ether-maleic anhydride (VEMA)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c2d7834cfaa5240d628c8930cad8ad
https://doi.org/10.2494/photopolymer.15.529
https://doi.org/10.2494/photopolymer.15.529
Autor:
Joo-Tae Moon, Dong-Won Jung, Tsutomu Tanaka, Sung-Ho Lee, Yool Kang, Sook Lee, Hyun-Woo Kim, Joe Mattia, Timothy G. Adams, Sang-Jun Choi, George G. Barclay, Sang-Gyun Woo, Stefan J. Caporale, Doris Kang, George W. Orsula, Robert J. Kavanagh
Publikováno v:
Journal of Photopolymer Science and Technology. 14:363-371
ArF lithography, in combination with chemically amplified resists, has been investigated as one of the most promising technologies for producing patterns below 100nm. In considering the polymer matrix for 193nm photoresist applications, factors such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41847cad5b678807206fa83e102c0ca8
https://doi.org/10.2494/photopolymer.14.363
https://doi.org/10.2494/photopolymer.14.363
Autor:
J. K. Thomas, Robert J. Kavanagh and
Publikováno v:
Langmuir. 14:352-362
Transient absorption spectroscopy is used to observe photoinduced reactions at a solid SiO2−liquid interface. Several different types of conditions are arranged for the reactants: (1) where both reactants are in the liquid contained in the SiO2 por
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a8c6b841facd4e3da7c311043138088
https://doi.org/10.1021/la9705930
https://doi.org/10.1021/la9705930
Publikováno v:
Langmuir. 8:3008-3013
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a013c7beec22855dc7d5051732a62937
https://doi.org/10.1021/la00048a026
https://doi.org/10.1021/la00048a026
Autor:
Marie Hellion, Teruaki Ogawa, Tracy K. Lindsay, Cheng Bai Xu, Jason A. DeSISTO, Tatum Kobayashi, Young Cheol Bae, Robert J. Kavanagh, Tsutomu Tanaka, George W. Orsula
Publikováno v:
SPIE Proceedings.
It was found that the structure of a matrix polymer has strong influence on the PEB sensitivity of 193nm photoresists. As reported, photoresists containing CO polymers exhibited superior property in terms of PEB sensitivity to photoresists formulated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9c4fac32a06f496c9751a5473632e5
https://doi.org/10.1117/12.537451
https://doi.org/10.1117/12.537451
Autor:
James W. Thackeray, Robert J. Kavanagh, Tatum Kobayashi, Young Cheol Bae, Timothy G. Adams, George G. Barclay, Patrick J. Bolton, Lujia Bu, Nick Pugliano
Publikováno v:
Advances in Resist Technology and Processing XX.
Surface roughness of 193 nm resists after a dry etch process is one of the critical issues in the implementation of 193 nm lithography to sub- 100 nm technology nodes. Compared to commercial 248 nm resists, 193 nm photoresists exhibit significant rou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ee98e8b0303abb4a810c3d133e051c4
https://doi.org/10.1117/12.483761
https://doi.org/10.1117/12.483761
Autor:
Subbareddy Kanagasabapathy, George G. Barclay, Robert J. Kavanagh, Joseph Mattia, Young Cheol Bae, Tracy K. Lindsay, Takafumi Kanno, Gerd Pohlers
Publikováno v:
Advances in Resist Technology and Processing XX.
There are numerous methods being explored by lithographers to achieve contact holes below 100nm. Regarding optical impact on contact hole imaging, very high numerical aperture tools are becoming available at 193nm (as high as 0.9) and various optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::944aee49f5583f259b16704b6454016a
https://doi.org/10.1117/12.485173
https://doi.org/10.1117/12.485173
Autor:
Sung-Ho Lee, Sook Lee, Sang-Jun Choi, Joo-Tae Moon, George G. Barclay, Yun-Sook Chae, Robert J. Kavanagh, Sang-Gyun Woo, Yool Kang, Hyun-woo Kim, Ji-Soo Kim, Dong-Seok Nam
Publikováno v:
SPIE Proceedings.
It is expected that ArF lithography will be introduced for device manufacturing for sub-100 nm nodes, as high NA ArF step and scan systems (NA=0.75) become available. We previously reported on a platform, based on a vinyl ether- maleic anhydride (VEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95cd3815b03c71d6349580c256ad8629
https://doi.org/10.1117/12.474253
https://doi.org/10.1117/12.474253
Autor:
Robert J. Kavanagh, Joe Mattia, Sang-Jun Choi, Sung-Ho Lee, George G. Barclay, Hyun-Woo Kim, Yool Kang, Doris Kang, George W. Orsula, Sook Lee, Stefan J. Caporale, Timothy G. Adams, Sang-Gyun Woo, Tsutomu Tanaka, Joo-Tae Moon, Dong-Won Jung
Publikováno v:
SPIE Proceedings.
ArF lithography, in combination with chemically amplified resists, has been investigated as one of the most promising technologies for producing patterns below 100 nm. In considering the polymer matrix for 193 nm photoresist applications, factors suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ffd2d678b94b601b4e99e34de5c5ffa
https://doi.org/10.1117/12.436840
https://doi.org/10.1117/12.436840
Autor:
Gerd Pohlers, Robert F. Blacksmith, James W. Thackeray, Stefan J. Caporale, Sang-Gyun Woo, Sang-Jun Choi, George G. Barclay, Joe Mattia, Sook Lee, Thomas Penniman, Hyun-Woo Kim, Lori Anne Joesten, James F. Cameron, Robert J. Kavanagh, Dong-Won Jung, Doris Kang
Publikováno v:
SPIE Proceedings.
In this paper we review the design and performance of ArF resists developed from various polymer platforms. Inadequate etch performance of early ArF acrylate platforms necessitated the development of new etch resistant platforms, in terms of both etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63778bcdef255a1d5d9521abfcfb2e30
https://doi.org/10.1117/12.436908
https://doi.org/10.1117/12.436908