Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Robert J. Kaplar"'
Autor:
Andrew T. Binder, James A. Cooper, Jeffrey Steinfeldt, Andrew A. Allerman, Richard Floyd, Luke Yates, Robert J. Kaplar
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100218- (2023)
This paper describes a process for forming a buried field shield in GaN by an etch-and-regrowth process, which is intended to protect the gate dielectric from high fields in the blocking state. GaN trench MOSFETs made at Sandia serve as the baseline
Externí odkaz:
https://doaj.org/article/b7c8e9011ad2440cbab5a3681ba9f291
Autor:
James C. Gallagher, Michael A. Mastro, Mona A. Ebrish, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-11 (2023)
Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs res
Externí odkaz:
https://doaj.org/article/1ac3926697a74e94a44d8726bab50e74
Autor:
Andrew T. Binder, Jeffrey Steinfeldt, Kevin J. Reilly, Richard S. Floyd, Peter T. Dickens, Joseph P. Klesko, Andrew A. Allerman, Robert J. Kaplar
Publikováno v:
Applied Physics Express, Vol 17, Iss 10, p 101003 (2024)
This work reports on high current density 1.2 kV class HfO _2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output current density of 330 mA mm ^−1 is reported at a drain bias of five volts, which, to o
Externí odkaz:
https://doaj.org/article/6bfced98a96d4329bbc24d8325a7950f
Autor:
James C. Gallagher, Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy a
Externí odkaz:
https://doaj.org/article/0ec73626ce3f472a8ac3201e0452ada9
Autor:
Dong Ji, Ke Zeng, Zhengliang Bian, Bhawani Shankar, Brendan P. Gunning, Andrew Binder, Jeramy R. Dickerson, Ozgur Aktas, Travis J. Anderson, Robert J. Kaplar, Srabanti Chowdhury
Publikováno v:
AIP Advances, Vol 12, Iss 3, Pp 030703-030703-8 (2022)
Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the
Externí odkaz:
https://doaj.org/article/f3c09ca633544dbf89883e18c18fcb93
Autor:
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 444-452 (2019)
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al0.85
Externí odkaz:
https://doaj.org/article/6d1b3698d9d3405d8da45f9aff91a965
Autor:
Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, James C. Gallagher, Robert J. Kaplar, Brendan P. Gunning, Karl D. Hobart, Travis J. Anderson
Publikováno v:
Crystals, Vol 12, Iss 5, p 623 (2022)
GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination. The breakdown behavior in terms of the breakdown voltage and the elec
Externí odkaz:
https://doaj.org/article/6a128e555ceb4faa996a20fa424064b2
Autor:
Prakash Pandey, Tolen M. Nelson, William M. Collings, Michael R. Hontz, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan Jacobs, Mona A. Ebrish, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Raghav Khanna
Publikováno v:
IEEE Transactions on Electron Devices. 69:5096-5103
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aede49f7afb7bb7f76d0543d68ac684
https://doi.org/10.1109/ted.2022.3192796
https://doi.org/10.1109/ted.2022.3192796
Autor:
Luke Yates, Brendan P. Gunning, Mary H. Crawford, Jeffrey Steinfeldt, Michael L. Smith, Vincent M. Abate, Jeramy R. Dickerson, Andrew M. Armstrong, Andrew Binder, Andrew A. Allerman, Robert J. Kaplar
Publikováno v:
IEEE Transactions on Electron Devices. 69:1931-1937
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4bd53bd04bdfc11189bf647be1a0b6
https://doi.org/10.1109/ted.2022.3154665
https://doi.org/10.1109/ted.2022.3154665
Publikováno v:
Journal of Materials Research. 36:4601-4615
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4700272c7a95f87712ba45d4c97b3a7
https://doi.org/10.1557/s43578-021-00458-1
https://doi.org/10.1557/s43578-021-00458-1