Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Robert Illing"'
Autor:
Werner Robl, Sven Gustav Lanzerstorfer, Stefan Decker, Markus Ladurner, Thomas Detzel, Stefan Wöhlert, Bernhard Auer, Michael Rogalli, Robert Illing, Michael Nelhiebel, J. Fugger
Publikováno v:
Microelectronics Reliability. 53:1745-1749
Electric overload situations in automotive truck applications necessitate a particularly efficient and reliable heat management for silicon power devices, especially when repetitive events must be handled. We show by simulations and experiments that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::039cbefa06caa4e8bbb1e69369af7878
https://doi.org/10.1016/j.microrel.2013.07.123
https://doi.org/10.1016/j.microrel.2013.07.123
Autor:
Helmut Kock, Michael Nelhiebel, Markus Ladurner, Robert Illing, Michael Glavanovics, Christian Djelassi, Stefano de Filippis, Dionyz Pogany
Publikováno v:
Microelectronics Reliability. 51:1913-1918
This paper focuses on optimization of bond wire positions as a method to improve thermal management of power semiconductors. For this purpose, robustness of a new low-voltage MOSFET generation with an optimized multiple bond wire arrangement and devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da84d82949e7e5c2e9f7a1624e6b4208
https://doi.org/10.1016/j.microrel.2011.06.052
https://doi.org/10.1016/j.microrel.2011.06.052
Autor:
T. Herzig, Christoph Schreiber, Christoph Kadow, Donald Dibra, Michael Nelhiebel, M. Inselsbacher, Michael Glavanovics, Sylvain Fraïssé, Stefan Wöhlert, Robert Illing, Markus Ladurner, Sven Gustav Lanzerstorfer, Stefan Decker, Michael Rogalli, M. Poschgan, Werner Robl, H. Unterwalcher
Publikováno v:
Microelectronics Reliability. 51:1927-1932
We demonstrate that by novel technology concepts, silicon devices can handle electrical power pulses millions of times without failure, although peak temperatures in the silicon reach 350 °C during every cycle. This was made possible by a robust tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f60dce774727444f8cc3ba5513e2c11
https://doi.org/10.1016/j.microrel.2011.06.042
https://doi.org/10.1016/j.microrel.2011.06.042
Publikováno v:
Microelectronics Journal. 41:889-896
The relevance of thermally non-linear silicon material models for transient thermal FEM simulations of smart power switches (SPS) is proved by a power silicon test device consisting of two power transistors and eleven integrated temperature sensors d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::311194dd5d6697acdd294a786d2c9fb7
https://doi.org/10.1016/j.mejo.2010.07.016
https://doi.org/10.1016/j.mejo.2010.07.016
Autor:
Helmut Kock, Stefan Decker, Stefano de Filippis, Michael Nelhiebel, Andrea Irace, Robert Illing
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Power MOSFETs integrated in modern Smart Power switches feature a substantial high current capability due to the very low value of their transconductance coefficient K. In this paper we demonstrate that the trend related to the increasing current cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a8131bb76c1611fbd0c1c058eeb516
https://doi.org/10.1109/ispsd.2013.6694414
https://doi.org/10.1109/ispsd.2013.6694414
Autor:
Donald Dibra, Thomas Ostermann, Helmut Kock, Dionyz Pogany, Stefan Decker, Gregor Pobegen, Stefano de Filippis, Michael Glavanovics, Robert Illing
Publikováno v:
2011 IEEE ICMTS International Conference on Microelectronic Test Structures.
A test chip with the purpose of thermal monitoring and analysis is implemented in a common-drain smart power trench MOSFET technology. For accurate evaluation of the junction temperature, small embedded sensor structures are introduced. One sensor is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d407401ef13f59477e949a36de24f87
https://doi.org/10.1109/icmts.2011.5976842
https://doi.org/10.1109/icmts.2011.5976842
Publikováno v:
BMAS
This paper presents a method for the compact modeling, simulation and experimental verification of digital protection functions of smart power switches consisting of a digital controller and a power MOSFET with analog driving circuitry. We focus on s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1437620bfe93b5e841a490ac59c2fe7a
https://doi.org/10.1109/bmas.2009.5338890
https://doi.org/10.1109/bmas.2009.5338890
Autor:
Robert Illing
Publikováno v:
Music and Letters. 78:143-143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::150d6f27fa3a1f62451e66600b6fd12a
https://doi.org/10.1093/ml/78.1.143-a
https://doi.org/10.1093/ml/78.1.143-a
Publikováno v:
Australian Academic & Research Libraries. 20:121-128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c83016e01f33ca4a88caf4bff779cba9
https://doi.org/10.1080/00048623.1989.10754653
https://doi.org/10.1080/00048623.1989.10754653
Autor:
Robert Illing
Publikováno v:
Music and Letters. :219-223
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c24713de6caaa0069a333ff6a18eb63
https://doi.org/10.1093/ml/xlix.3.219
https://doi.org/10.1093/ml/xlix.3.219